參數(shù)資料
型號(hào): THS6012DWP
廠商: Texas Instruments, Inc.
英文描述: 500-mA DUAL DIFFERENTIAL LINE DRIVER
中文描述: 500毫安雙差分線路驅(qū)動(dòng)器
文件頁(yè)數(shù): 19/35頁(yè)
文件大?。?/td> 604K
代理商: THS6012DWP
THS6012
500-mA DUAL DIFFERENTIAL LINE DRIVER
SLOS226C– SEPTEMBER 1998 – REVISED FEBRUARY 2000
19
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
t – Time – ns
VCC =
±
15 V
Gain = 5
RL = 25
RF = 2 k
tr/tf= 5 ns
See Figure 3
20-V STEP RESPONSE
4
–4
0
–8
V
12
8
0
150
100
50
200
250
350
300
400
450 500
16
–12
–16
Figure 38
APPLICATION INFORMATION
The THS6012 contains two independent operational amplifiers. These amplifiers are current feedback topology
amplifiers made for high-speed operation. They have been specifically designed to deliver the full power
requirements of ADSL and therefore can deliver output currents of at least 400 mA at full output voltage.
The THS6012 is fabricated using Texas Instruments 30-V complementary bipolar process, HVBiCOM. This
process provides excellent isolation and high slew rates that result in the device’s excellent crosstalk and
extremely low distortion.
independent power supplies
Each amplifier of the THS6012 has its own power supply pins. This was specifically done to solve a problem
that often occurs when multiple devices in the same package share common power pins. This problem is
crosstalk between the individual devices caused by currents flowing in common connections. Whenever the
current required by one device flows through a common connection shared with another device, this current,
in conjunction with the impedance in the shared line, produces an unwanted voltage on the power supply. Proper
power supply decoupling and good device power supply rejection helps to reduce this unwanted signal. What
is left is crosstalk.
However, with independent power supply pins for each device, the effects of crosstalk through common
impedance in the power supplies is more easily managed. This is because it is much easier to achieve low
common impedance on the PCB with copper etch than it is to achieve low impedance within the package with
either bond wires or metal traces on silicon.
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