參數(shù)資料
型號(hào): TEA1612T
廠商: NXP SEMICONDUCTORS
元件分類: 模擬信號(hào)調(diào)理
英文描述: SPECIALTY ANALOG CIRCUIT, PDSO24
封裝: 7.50 MM, PLASTIC, MS-013, SOT137-1, SOP-24
文件頁數(shù): 6/19頁
文件大?。?/td> 108K
代理商: TEA1612T
TEA1612T_1
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 24 September 2009
14 of 19
NXP Semiconductors
TEA1612T
Zero voltage switching resonant converter controller
[1]
The supply current IDD increases with the increasing bridge frequency to drive the capacitive load of two MOSFETs. Typical MOSFETs
for the TEA1612T application are 8N50 (NXP type PHX80N50E, QG(tot) = 55 nC (typ) and these will increase the supply current at
150 kHz according to the following formula:
[2]
The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak voltage swing VCF and the charge/discharge
currents Ich(CF) and Idch(CF).
Reset pin
Vrst
reset voltage
2.15
2.4
2.65
V
Vrst(hys)
hysteresis of reset voltage
-
0.65
-
V
II(rst)
reset input current
-
1
A
CSS pin
Istart(soft)
soft start current
12
15
18
A
CT pin
Ich
charge current
21
27
33
A
Idch
discharge current
8
10
12
A
Ileak
leakage current
0.1
0.3
1
A
Ich/Idch
charge current to discharge
current ratio
2.4
2.7
3.0
A
Vtrip(H)(CT)
HIGH-level trip voltage on
pin CT
2.7
3
3.3
V
Vtrip(L)(CT)
LOW-level trip voltage on pin
CT
0.6
0.7
0.8
V
OCP pin
Vref(OCP)
reference voltage on pin
OCP
280
305
330
mV
OTP
Totp(act)
activation overtemperature
protection temperature
120
135
150
°C
BO pin
Vtrip(bo)
brownout trip voltage
1.19
1.25
1.31
V
Ibo(hys)
hysteresis of brownout
current
14
16
18
A
BURST pin
Vref(BURST)
reference voltage on pin
BURST
1.75
1.8
1.85
V
PFC pin
Ileak
leakage current
VPFC = 1 V
--1
A
Vsat
saturation voltage
IPFC = 1 mA
-
0.2
V
HYST pin
Ileak
leakage current
VHYST = 5 V
--1
A
Table 5.
Characteristics …continued
All voltages are referred to the ground pins which must be connected externally; positive currents ow into the IC; VDD =13V
and Tamb =25 °C; tested using the circuit shown in Figure 7, unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
I
DD
2Q
Gtot
()
f
bridge
×
2
55nC
150kHz
×
16.5mA
==
=
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