參數(shù)資料
型號： TEA1612T
廠商： NXP SEMICONDUCTORS
元件分類： 模擬信號調(diào)理
英文描述： SPECIALTY ANALOG CIRCUIT, PDSO24
封裝： 7.50 MM, PLASTIC, MS-013, SOT137-1, SOP-24
文件頁數(shù)： 3/19頁
文件大?。?/td> 108K
代理商： TEA1612T
TEA1612T_1
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 24 September 2009
11 of 19
NXP Semiconductors
TEA1612T
Zero voltage switching resonant converter controller
8.
Limiting values
[1]
It is recommended that a 100 nF capacitor be placed as close as possible to the VDD pin (as indicated in
Figure 7, and in the application note).
[2]
Human body model class 2: equivalent to discharging a 100 pF capacitor through a 1.5 k
series resistor.
[3]
Machine model class 2: equivalent to discharging a 200 pF capacitor through a 0.75
H coil and 10
resistor.
9.
Thermal characteristics
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Supply Voltages
Vdrv(hs)
high-side driver voltage
0
600
V
VDD
supply voltage
[1] 014
V
Vaux
auxiliary voltage
[1] 020
V
Voltages on pins P, SD, RESET, OCP, BO, PFC, BURST, HYST and CT
VI
input voltage
0
5
V
Currents
IIFS
current on pin IFS
-
1
÷ 16
mA
IIRS
current on pin IRS
-
1
mA
IVREF
current on pin VREF
-
2mA
Power and temperature
Ptot
total power dissipation
Tamb <70 °C
-
0.8
W
Tamb
ambient temperature
operating
25
+70
°C
Tstg
storage temperature
25
+150
°C
Handling
VESD
electrostatic discharge voltage
2000
V
200
V
Table 4.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-a)
thermal resistance from junction
to ambient
in free air
100
K/W
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