參數(shù)資料
型號(hào): TE28F256P30T85
廠商: INTEL CORP
元件分類: DRAM
英文描述: Intel StrataFlash Embedded Memory
中文描述: 16M X 16 FLASH 1.8V PROM, 88 ns, PDSO56
封裝: 14 X 20 MM, TSOP-56
文件頁數(shù): 93/102頁
文件大?。?/td> 1609K
代理商: TE28F256P30T85
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
93
Appendix C Common Flash Interface
The Common Flash Interface (CFI) is part of an overall specification for multiple command-set
and control-interface descriptions. This appendix describes the database structure containing the
data returned by a read operation after issuing the CFI Query command (see
Section 9.2, “Device
Commands” on page 50
). System software can parse this database structure to obtain information
about the flash device, such as block size, density, bus width, and electrical specifications. The
system software will then know which command set(s) to use to properly perform flash writes,
block erases, reads and otherwise control the flash device.
C.1
Query Structure Output
The Query database allows system software to obtain information for controlling the flash device.
This section describes the device’s CFI-compliant interface that allows access to Query data.
Query data are presented on the lowest-order data outputs (DQ
7-0
) only. The numerical offset value
is the address relative to the maximum bus width supported by the device. On this family of
devices, the Query table device starting address is a 10h, which is a word address for x16 devices.
For a word-wide (x16) device, the first two Query-structure bytes, ASCII “Q” and “R,” appear on
the low byte at word addresses 10h and 11h. This CFI-compliant device outputs 00h data on upper
bytes. The device outputs ASCII “Q” in the low byte (DQ
7-0
) and 00h in the high byte (DQ
15-8
).
At Query addresses containing two or more bytes of information, the least significant data byte is
presented at the lower address, and the most significant data byte is presented at the higher address.
In all of the following tables, addresses and data are represented in hexadecimal notation, so the
“h” suffix has been dropped. In addition, since the upper byte of word-wide devices is always
“00h,” the leading “00” has been dropped from the table notation and only the lower byte value is
shown. Any x16 device outputs can be assumed to have 00h on the upper byte in this mode.
Table 32.
Example of Query Structure Output of x16- Devices
Table 31.
Summary of Query Structure Output as a Function of Device and Mode
Device
Hex
Offset
Hex
Code
ASCII
Value
Device Addresses
00010:
51
“Q”
00011:
52
“R”
00012:
59
“Y”
相關(guān)PDF資料
PDF描述
TE28F640P30B85 Intel StrataFlash Embedded Memory
TE28F640P30T85 Intel StrataFlash Embedded Memory
TE28F128P30B85 Intel StrataFlash Embedded Memory
TE28F160B3-B120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F800B3-B120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F256P30T95 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx StrataFlash Embedded Memory
TE28F256P30T95A 功能描述:IC FLASH 256MBIT 95NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
TE28F256P30TFA 功能描述:IC FLASH 256MBIT 110NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Axcell™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
TE28F256P33B95A 功能描述:IC FLASH 256MBIT 95NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:32K (4K x 8) 速度:100kHz,400kHz 接口:I²C,2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR
TE28F256P33BFA 功能描述:IC FLASH 256MBIT 105NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Axcell™ 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:32K (4K x 8) 速度:100kHz,400kHz 接口:I²C,2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR