參數(shù)資料
型號： TE28F256P30T85
廠商： INTEL CORP
元件分類： DRAM
英文描述： Intel StrataFlash Embedded Memory
中文描述： 16M X 16 FLASH 1.8V PROM, 88 ns, PDSO56
封裝： 14 X 20 MM, TSOP-56
文件頁數(shù)： 21/102頁
文件大?。?/td> 1609K
代理商： TE28F256P30T85
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
21
VCCQ
Power
Output Power Supply:
Output-driver source voltage.
VSS
Power
Ground:
Connect to system ground. Do not float any VSS connection.
RFU
—
Reserved for Future Use:
Reserved by Intel for future device functionality and enhancement. These
should be treated in the same way as a Do Not Use (DU) signal.
DU
—
Do Not Use:
Do not connect to any other signal, or power supply; must be left floating.
NC
—
No Connect:
No internal connection; can be driven or floated.
Table 3.
TSOP and Easy BGA Signal Descriptions (Sheet 2 of 2)
Symbol
Type
Name and Function
Table 4.
QUAD+ SCSP Signal Descriptions (Sheet 1 of 2)
Symbol
Type
Name and Function
A[MAX:0]
Input
ADDRESS INPUTS:
Device address inputs. 64-Mbit: A[21:0]; 128-Mbit: A[22:0]; 256-Mbit: A[23:0];
512-Mbit: A[24:0].
See
Table 6 on page 22
,
Figure 11 on page 23
, and
Figure 12 on page 23
for 512-Mbit and 1-Gbit
addressing.
DQ[15:0]
Input/
Output
DATA INPUT/OUTPUTS:
Inputs data and commands during write cycles; outputs data during
memory, Status Register, Protection Register, and Read Configuration Register reads. Data balls
float when the CE# or OE# are deasserted. Data is internally latched during writes.
ADV#
Input
ADDRESS VALID:
Active low input. During synchronous read operations, addresses are latched on
the rising edge of ADV#, or on the next valid CLK edge with ADV# low, whichever occurs first.
In asynchronous mode, the address is latched when ADV# going high or continuously flows through
if ADV# is held low.
WARNING: Designs not using ADV# must tie it to VSS to allow addresses to flow through.
F1-CE#
F2-CE#
Input
FLASH CHIP ENABLE:
Active low input. CE# low selects the associated flash memory die. When
asserted, flash internal control logic, input buffers, decoders, and sense amplifiers are active. When
deasserted, the associated flash die is deselected, power is reduced to standby levels, data and
WAIT outputs are placed in high-Z state.
See
Table 6 on page 22
for CE# assignment definitions.
WARNING: All chip enables must be high when device is not in use.
CLK
Input
CLOCK:
Synchronizes the device with the system’s bus frequency in synchronous-read mode.
During synchronous read operations, addresses are latched on the rising edge of ADV#, or on the
next valid CLK edge with ADV# low, whichever occurs first.
WARNING: Designs not using CLK for synchronous read mode must tie it to VCCQ or VSS.
F1-OE#
F2-OE#
Input
OUTPUT ENABLE:
Active low input. OE# low enables the device’s output data buffers during read
cycles. OE# high places the data outputs and WAIT in High-Z.
F1-OE# and F2-OE# should be tied together for all densities.
RST#
Input
RESET:
Active low input. RST# resets internal automation and inhibits write operations. This
provides data protection during power transitions. RST# high enables normal operation. Exit from
reset places the device in asynchronous read array mode.
WAIT
Output
WAIT:
Indicates data valid in synchronous array or non-array burst reads. Read Configuration
Register bit 10 (RCR[10], WT) determines its polarity when asserted. WAIT’s active output is V
OL
or
V
OH
when CE# and OE# are V
IL
. WAIT is high-Z if CE# or OE# is V
IH
.
In synchronous array or non-array read modes, WAIT indicates invalid data when asserted and
valid data when deasserted.
In asynchronous page mode, and all write modes, WAIT is deasserted.
WE#
Input
WRITE ENABLE:
Active low input. WE# controls writes to the device. Address and data are latched
on the rising edge of WE#.
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