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參數(shù)資料
| 型號(hào)： | TE28F200BV-T80 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | POWERLINE: RP40-S_D_TG - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- International Safety Standard Approvals- Standard 50.8 x50.8x10.2mm Package- Efficiency to 90% |
| 中文描述： | 256K X 8 FLASH 5V PROM, 110 ns, PDSO56 |
| 封裝： | 14 X 20 MM, TSOP-56 |
| 文件頁數(shù)： | 50/55頁 |
| 文件大小： | 638K |
| 代理商： | TE28F200BV-T80 |
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2-MBIT SmartVoltage BOOT BLOCK FAMILY
E
50
SEE NEW DESIGN RECOMMENDATIONS
4.13
AC Characteristics
—WE#-Controlled Write Operations
(1)
—
Extended Temperature
Prod
TBV-80
TBV-80
TBE-120
Sym
Parameter
V
CC
3.3 ±0.3 V
(9)
5 V±10%
(10)
Unit
Load
50 pF
100 pF
Notes
Min
Max
Min
Max
t
AVAV
t
PHWL
Write Cycle Time
110
80
ns
RP# High Recovery to WE# Going Low
0.8
0.45
μ
s
t
ELWL
t
PHHWH
t
VPWH
t
AVWH
t
DVWH
t
WLWH
t
WHDX
t
WHAX
t
WHEH
t
WHWL
t
WHQV1
CE# Setup to WE# Going Low
0
0
ns
Boot Block Lock Setup to WE# Going High
6,8
200
100
ns
V
PP
Setup to WE# Going High
Address Setup to WE# Going High
5,8
200
100
ns
3
90
60
ns
Data Setup to WE# Going High
4
70
60
ns
WE# Pulse Width
90
60
ns
Data Hold Time from WE# High
4
0
0
ns
Address Hold Time from WE# High
3
0
0
ns
CE# Hold Time from WE# High
0
0
ns
WE# Pulse Width High
20
20
ns
Word/Byte Program Time
2,5,8
6
6
μs
t
WHQV2
Erase Duration (Boot)
2,5,6,8
0.3
0.3
s
t
WHQV3
Erase Duration (Param)
2,5,8
0.3
0.3
s
t
WHQV4
Erase Duration (Main)
2,5,8
0.6
0.6
s
t
QVVL
t
QVPH
t
PHBR
V
PP
Hold from Valid SRD
5,8
0
0
ns
RP# V
HH
Hold from Valid SRD
6,8
0
0
ns
Boot-Block Lock Delay
7,8
200
100
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TE28F800BV-T80 | POWERLINE: RP40-S_D_TE - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- Standard 76.2 x66.0x10.2mm Package- Efficiency to 90% |
| TE28F800CET120 | 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F800CV-T60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F800CV-T80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F800CVT90 | 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F200BX-B80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F200BX-B90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| TE28F200BX-T80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F200BX-T90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| TE28F200CV-B60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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