參數(shù)資料
型號(hào)： TE28F200BV-T80
廠商： INTEL CORP
元件分類： DRAM
英文描述： POWERLINE: RP40-S_D_TG - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- International Safety Standard Approvals- Standard 50.8 x50.8x10.2mm Package- Efficiency to 90%
中文描述： 256K X 8 FLASH 5V PROM, 110 ns, PDSO56
封裝： 14 X 20 MM, TSOP-56
文件頁(yè)數(shù)： 12/55頁(yè)
文件大小： 638K
代理商： TE28F200BV-T80
2-MBIT SmartVoltage BOOT BLOCK FAMILY
E
12
SEE NEW DESIGN RECOMMENDATIONS
Table 2. 28F200/002 Pin Descriptions
Symbol
Type
Name and Function
WP#
INPUT
WRITE PROTECT:
Provides a method for unlocking the boot block in a system
without a 12 V supply.
When WP# is at logic low, the boot block is locked
, preventing program and
erase operations to the boot block. If a program or erase operation is attempted
on the boot block when WP# is low, the corresponding status bit (bit 4 for
program, bit 5 for erase) will be set in the status register to indicate the operation
failed.
When WP# is at logic high, the boot block is unlocked
and can be
programmed or erased.
NOTE:
This feature is overridden and the boot block unlocked when RP# is at
V
HH
. See Section 3.4 for details on write protection.
BYTE#
INPUT
BYTE# ENABLE:
Not available on
28F002B
. Controls whether the device
operates in the byte-wide mode (x8) or the word-wide mode (x16). BYTE# pin
must be controlled at CMOS levels to meet the CMOS current specification in the
standby mode.
When BYTE# is at logic low, the byte-wide mode is enabled
, where data is
read and programmed on DQ
0
–DQ
7
and DQ
15
/A
–1
becomes the lowest order
address that decodes between the upper and lower byte. DQ
8
–DQ
14
are tri-stated
during the byte-wide mode.
When BYTE# is at logic high, the word-wide mode is enabled
, where data is
read and programmed on DQ
0
–DQ
15
.
V
CC
DEVICE POWER SUPPLY:
5.0 V
±
10%, 3.3 V
±
0.3 V, 2.7 V–3.6 V (BE/CE
only)
V
PP
PROGRAM/ERASE POWER SUPPLY:
For erasing memory array blocks or
programming data in each block, a voltage either of 5 V
±
10% or 12 V
±
5% must
be applied to this pin. When V
PP
< V
PPLK
all blocks are locked and protected
against Program and Erase commands.
GND
GROUND:
For all internal circuitry.
NC
NO CONNECT:
Pin may be driven or left floating.
相關(guān)PDF資料
PDF描述
TE28F800BV-T80 POWERLINE: RP40-S_D_TE - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- Standard 76.2 x66.0x10.2mm Package- Efficiency to 90%
TE28F800CET120 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F800CV-T60 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F800CV-T80 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F800CVT90 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F200BX-B80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
TE28F200BX-B90 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
TE28F200BX-T80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
TE28F200BX-T90 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
TE28F200CV-B60 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
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