參數(shù)資料
型號(hào)： TE28F200BV-T80
廠商： INTEL CORP
元件分類(lèi)： DRAM
英文描述： POWERLINE: RP40-S_D_TG - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- International Safety Standard Approvals- Standard 50.8 x50.8x10.2mm Package- Efficiency to 90%
中文描述： 256K X 8 FLASH 5V PROM, 110 ns, PDSO56
封裝： 14 X 20 MM, TSOP-56
文件頁(yè)數(shù)： 49/55頁(yè)
文件大?。?/td> 638K
代理商： TE28F200BV-T80
E
4.12
2-MBIT SmartVoltage BOOT BLOCK FAMILY
49
SEE NEW DESIGN RECOMMENDATIONS
AC Characteristics
—Read Only Operations
(1)
—Extended Temperature
Prod
TBV-80
TBV-80
TBE-120
Symbol
Parameter
V
CC
3.3 ± 0.3 V
(5)
5 V ± 10%
(6)
Unit
Load
50 pF
100 pF
Notes
Min
Max
Min
Max
t
AVAV
Read Cycle Time
110
80
ns
t
AVQV
Address to Output Delay
110
80
ns
t
ELQV
CE# to Output Delay
2
110
80
ns
t
PHQV
RP# to Output Delay
0.8
0.45
μ
s
t
GLQV
OE# to Output Delay
2
65
40
ns
t
ELQX
CE# to Output in Low Z
3
0
0
ns
t
EHQZ
CE# to Output in High Z
3
45
25
ns
t
GLQX
OE# to Output in Low Z
3
0
0
ns
t
GHQZ
OE# to Output in High Z
3
45
25
ns
t
OH
Output Hold from Address, CE#,
or OE# Change, Whichever
Occurs First
3
0
0
ns
t
ELFL
t
ELFH
CE# Low to BYTE# High or Low
3
0
0
ns
t
AVFL
t
FLQV
t
FHQV
Address to BYTE# High or Low
3
5
5
ns
BYTE# to Output Delay
3,4
110
80
ns
t
FLQZ
BYTE# Low to Output in High Z
3
45
30
ns
t
PLPH
Reset Pulse Width
7
150
60
ns
t
PLQZ
RP# Low to Output High-Z
150
60
ns
NOTES:
1. See AC Input/Output Reference Waveform for timing measurements.
2. OE# may be delayed up to t
CE
–t
OE
after the falling edge of CE# without impact on t
CE
.
3. Sampled, but not 100% tested.
4. t
FLQV
, BYTE# switching low to valid output delay will be equal to t
AVQV
, measured from the time DQ
15
/A
–1
becomes valid.
5. See Test Configuration(Figure 21), 3.6 V and 3.3
±
0.3 V Standard Test component values.
6. See Test Configuration(Figure 21), 5 V Standard Test component values.
7. The specification t
PLPH
is the minimum time that RP# must be held low in order to product a valid reset of the device.
相關(guān)PDF資料
PDF描述
TE28F800BV-T80 POWERLINE: RP40-S_D_TE - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- Standard 76.2 x66.0x10.2mm Package- Efficiency to 90%
TE28F800CET120 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F800CV-T60 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F800CV-T80 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F800CVT90 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F200BX-B80 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
TE28F200BX-B90 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8/x16 Flash EEPROM
TE28F200BX-T80 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
TE28F200BX-T90 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8/x16 Flash EEPROM
TE28F200CV-B60 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
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