參數(shù)資料
型號(hào): TE28F200BV-T80
廠商: INTEL CORP
元件分類: DRAM
英文描述: POWERLINE: RP40-S_D_TG - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- International Safety Standard Approvals- Standard 50.8 x50.8x10.2mm Package- Efficiency to 90%
中文描述: 256K X 8 FLASH 5V PROM, 110 ns, PDSO56
封裝: 14 X 20 MM, TSOP-56
文件頁數(shù): 46/55頁
文件大?。?/td> 638K
代理商: TE28F200BV-T80
2-MBIT SmartVoltage BOOT BLOCK FAMILY
E
46
SEE NEW DESIGN RECOMMENDATIONS
4.11
DC Characteristics
—Extended Temperature Operations
(Continued)
Prod
TBV-80
TBV-80
TBE-120
Sym
Parameter
V
CC
3.3 ± 0.3 V
5 V ± 10%
Unit
Test Conditions
Note
Typ
Max
Typ
Max
I
CCW
V
CC
Program Current
for Word or Byte
1,4
13
30
30
50
mA
V
PP
= V
PPH
1 (at 5 V)
Program in Progress
V
= V
2 (at 12 V)
Program in Progress
V
= V
1 (at 5 V)
Block Erase in
Progress
V
= V
2 (at 12 V)
Block Erase in
Progress
10
25
30
45
mA
I
CCE
V
CC
Erase Current
1,4
13
30
22
45
mA
10
25
18
40
mA
I
CCES
V
CC
Erase Suspend
Current
1,2
3
8.0
5
12.0
mA
CE# = V
Block Erase Suspend
V
PP
= V
PPH
1 (at 5 V)
I
PPS
V
PP
Standby Current
1
± 5
± 15
± 5
± 15
μA
V
PP
< V
PPH
2
I
PPD
V
PP
Deep Power-Down
Current
V
PP
Read Current
1
0.2
10
0.2
10
μA
RP# = GND ± 0.2 V
I
PPR
1
50
200
50
200
μA
V
PP
V
PPH
2
I
PPW
V
PP
Program Current
for Word or Byte
1,4
13
30
13
30
mA
V
PP
= V
PPH
1 (at 5 V)
8
25
8
25
mA
V
PP
= V
PPH
2 (at 12 V)
I
PPE
V
PP
Erase Current
1,4
13
30
15
25
mA
V
PP
= V
PPH
1 (at 5 V)
Block Erase in
Progress
V
PP
= V
PPH
2 (at 12 V)
Block Erase in
Progress
V
PP
= V
PPH
Block Erase Suspend
in Progress
RP# = V
HH
V
PP
= 12 V
8
25
10
20
mA
I
PPES
V
PP
Erase Suspend
Current
1
50
200
50
200
μA
I
RP#
RP# Boot Block Unlock
Current
1,4
500
500
μA
I
ID
A
9
Intelligent Identifier
Current
1,4
500
500
μA
A
9
= V
ID
相關(guān)PDF資料
PDF描述
TE28F800BV-T80 POWERLINE: RP40-S_D_TE - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- Standard 76.2 x66.0x10.2mm Package- Efficiency to 90%
TE28F800CET120 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F800CV-T60 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F800CV-T80 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F800CVT90 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F200BX-B80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
TE28F200BX-B90 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
TE28F200BX-T80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
TE28F200BX-T90 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
TE28F200CV-B60 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY