參數(shù)資料
型號(hào)： TE28F160B3BC70
廠商： INTEL CORP
元件分類： DRAM
英文描述： 3 Volt Advanced Boot Block Flash Memory
中文描述： 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁數(shù)： 46/49頁
文件大?。?/td> 427K
代理商： TE28F160B3BC70
SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
E
46
PRELIMINARY
APPENDIX B
WRITE STATE MACHINE CURRENT/NEXT STATES
Command Input (and Next State)
Current
State
SR.7
Data
When
Read
Read
Array
(FFH)
Program
Setup
(40/10H)
Erase
Setup
(20H)
Erase
Confirm
(D0H)
Program /
Erase
Susp.
(B0H)
Program /
Erase
Resume
(D0)
Read
Status
(70H)
Clear
Status
(50H)
Read ID
(90H)
Read Array
“1”
Array
Read
Array
Program
Setup
Erase
Setup
Read Array
Read
Status
Read
Array
Read
Identifier
Program
Setup
“1”
Status
Pgm.
1
Program (Command input = Data to be programmed)
Program
(Not Comp.)
“0”
Status
Program
Pgm Susp.
to Status
Program
Program
(Complete)
“1”
Status
Read
Array
Program
Setup
Erase
Setup
Read Array
Read
Status
Read
Array
Read
Identifier
Program
Suspend to
Status
“1”
Status
Prog.
Susp. to
Array
Program Suspend
to Array
Program
Program
Susp. to
Array
Program
Prog.
Susp. to
Status
Program Suspend to
Array
Program
Suspend to
Array
“1”
Array
Prog.
Susp. to
Array
Program Suspend
to Array
Program
Program
Susp. to
Array
Program
Prog.
Susp. to
Status
Prog.
Susp. to
Array
Prog.
Susp. to
Array
Erase Setup
“1”
Status
Erase Command Error
Erase
Erase
Cmd. Err.
Erase
Erase Command Error
Erase
Cmd. Error
“1”
Status
Read
Array
Program
Setup
Erase
Setup
Read Array
Read
Status
Read
Array
Read
Identifier
Erase
(Not Comp)
“0”
Status
Erase
Ers. Susp.
to Status
Erase
Erase
(Complete)
“1”
Status
Read
Array
Program
Setup
Erase
Setup
Read Array
Read
Status
Read
Array
Read
Identifier
Erase
Suspend to
Status
“1”
Status
Erase
Susp. to
Array
Program
Setup
Erase
Susp. to
Array
Erase
Erase
Susp. to
Array
Erase
Erase
Susp. to
Status
Erase Suspend
to Array
Erase. Susp.
to Array
“1”
Array
Erase
Susp. to
Array
Program
Setup
Erase
Susp. to
Array
Erase
Erase
Susp. to
Array
Erase
Erase
Susp. to
Status
Erase Suspend
to Array
Read Status
“1”
Status
Read
Array
Program
Setup
Erase
Setup
Read Array
Read
Status
Read
Array
Read
Identifier
Read
Identifier
“1”
ID
Read
Array
Program
Setup
Erase
Setup
Read Array
Read
Status
Read
Array
Read
Identifier
1.
You cannot program
“1”s to the flash. Writing FFH following the Program Setup will initiate the internal program algorithm
of the WSM. Although the algorithm will execute, array data is not changed. The WSM returns to read status mode without
reporting any error. Assuming V
PP
> V
PPLK
writing a second FFH while in read status mode will return the flash to read
array mode.
相關(guān)PDF資料
PDF描述
TE28F400B3B120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F400B3B150 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F400B3BA110 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F400B3BA90 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F400B3T110 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F160B3BC80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F160B3BD70 制造商:Intel 功能描述:
TE28F160B3BD70A 功能描述:IC FLASH 16MBIT 70NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤
TE28F160B3T110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F160B3T120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
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