參數(shù)資料
型號(hào)： TE28F160B3BC70
廠商： INTEL CORP
元件分類： DRAM
英文描述： 3 Volt Advanced Boot Block Flash Memory
中文描述： 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁數(shù)： 34/49頁
文件大?。?/td> 427K
代理商： TE28F160B3BC70
SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
E
34
PRELIMINARY
6.0
OPERATING CONDITIONS (V
CCQ
= 1.8V
–2.2V)
Table 12. Temperature and V
CC
Operating Conditions
Symbol
Parameter
Notes
Min
Max
Units
T
A
Operating Temperature
–40
+85
°C
V
CC1
2.7V–2.85V V
CC
Supply Voltage
1
2.7
2.85
Volts
V
CC2
2.7V–3.3V V
CC
Supply Voltage
1
2.7
3.3
Volts
V
CCQ
1.8V–2.2V I/O Supply Voltage
1,4
1.8
2.2
Volts
V
PP1
Program and Erase Voltage
1
2.7
2.85
Volts
V
PP2
1
2.7
3.3
Volts
V
PP3
1,2
11.4
12.6
Volts
Cycling
Block Erase Cycling
3
10,000
Cycles
NOTES:
1.
2.
See DC Characteristics tables for voltage range-specific specifications.
Applying V
= 11.4V
–12.6V during program/erase can only be done for a maximum of 1000 cycles on the main blocks
and 2500 cycles on the parameter. V
PP
may be connected to 12V for a total of 80 hours maximum. See Section 3.4 for
details.
For operating temperatures of –25
°
C– +85
°
C the device is projected to have a minimum block erase cycling of 10,000 to
30,000 cycles.
The voltage swing on the inputs, V
IN
is required to match V
CCQ
.
3.
4.
6.1
DC Characteristics: V
CCQ
= 1.8V
–2.2V
These tables are valid for the following power supply combinations only:
1.
2.
V
CC1
and V
CCQ
and (V
PP1
or V
PP3
)
V
CC2
and V
CCQ
and (V
PP2
or V
PP3
)
Wherever the input voltage V
IN
is mentioned, it is required that V
IN
matches the chosen V
CCQ
.
相關(guān)PDF資料
PDF描述
TE28F400B3B120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F400B3B150 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
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TE28F400B3BA90 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F160B3BC80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F160B3BD70 制造商:Intel 功能描述:
TE28F160B3BD70A 功能描述:IC FLASH 16MBIT 70NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤
TE28F160B3T110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F160B3T120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
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