參數(shù)資料
型號: TE28F160B3BC70
廠商: INTEL CORP
元件分類: DRAM
英文描述: 3 Volt Advanced Boot Block Flash Memory
中文描述: 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數(shù): 44/49頁
文件大?。?/td> 427K
代理商: TE28F160B3BC70
SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
E
44
PRELIMINARY
Table 17. Erase and Program Timings
V
PP
= 2.7V
V
PP
= 12V
Sym
Parameter
Notes
Typ
1
Max
3
Typ
1
Max
3
Unit
t
BWPB
Block Program Time
(Parameter)
2
0.10
0.30
0.03
0.10
sec
t
BWMB
Block Program Time (Main)
2
0.80
2.40
0.24
0.80
sec
t
WHQV1
t
EHQV1
Program Time
2
22
200
8
185
μs
t
WHQV2
t
EHQV2
Block Erase Time (Parameter)
2
1
5.0
0.8
4.8
sec
t
WHQV3
t
EHQV3
Block Erase Time (Main)
2
1.8
8.0
1.1
7.0
sec
t
WHRH1
t
EHRH1
Program Suspend Latency
3
5
10
5
10
μs
t
WHRH2
t
EHRH2
Erase Suspend Latency
3
5
20
6
12
μs
NOTES:
1.
2.
3.
Typical values measured at T
A
= +25°C and nominal voltages.
Excludes external system-level overhead.
Sampled, but not 100% tested.
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相關代理商/技術參數(shù)
參數(shù)描述
TE28F160B3BC80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F160B3BD70 制造商:Intel 功能描述:
TE28F160B3BD70A 功能描述:IC FLASH 16MBIT 70NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M(2M x 8,1M x 16) 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應商設備封裝:48-TSOP 包裝:托盤
TE28F160B3T110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F160B3T120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE