參數(shù)資料
型號(hào)： TE28F160B3B90
廠商： INTEL CORP
元件分類： DRAM
英文描述： SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述： 1M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁數(shù)： 23/48頁
文件大?。?/td> 304K
代理商： TE28F160B3B90
E
4.0
SMART 3 ADVANCED BOOT BLOCK
23
PRELIMINARY
ELECTRICAL SPECIFICATIONS
4.1
Absolute Maximum Ratings*
Extended Operating Temperature
During Read..........................
–40 °C to +85 °C
During Block Erase
and Program.......................... –40 °C to +85 °C
Temperature Under Bias ....... –40 °C to +85 °C
Storage Temperature................. –65 °C to +125 °C
Voltage on Any Pin
(except V
CC
, V
CCQ
and V
PP
)
with Respect to GND............. –0.5 V to 3.7 V
(1)
V
PP
Voltage (for Block
Erase and Program)
with Respect to GND.....–0.5 V to +13.5 V
(1,2,4)
V
CC
and V
CCQ
Supply Voltage
with Respect to GND........... –0.2 V to +3.7 V
(5)
Output Short Circuit Current.....................100 mA
(3)
NOTICE: This datasheet contains preliminary information on
new products in production. Do not finalize a design with
this information. Revised information will be published when
the product is available. Verify with your local Intel Sales
office that you have the latest datasheet before finalizing a
design.
* WARNING: Stressing the device beyond the "Absolute
Maximum Ratings" may cause permanent damage. These
are stress ratings only. Operation beyond the "Operating
Conditions" is not recommended and extended exposure
beyond the "Operating Conditions" may effect device
reliability.
NOTES:
1.
Minimum DC voltage is
–0.5 V on input/output pins, with allowable undershoot to –2.0 V for periods < 20 ns. Maximum DC
voltage on input/output pins is V
CC
+ 0.5 V, with allowable overshoot to V
CC
+ 1.5 V for periods < 20 ns.
Maximum DC voltage on V
PP
may overshoot to +14.0 V for periods < 20 ns.
Output shorted for no more than one second. No more than one output shorted at a time.
V
PP
Program voltage is normally 2.7 V–3.6 V.
Minimum DC voltage is –0.5 V on V
CC
and V
CCQ
, with allowable undershoot to –2.0 V for periods < 20 ns. Maximum DC
voltage on V
CC
and V
CCQ
pins is V
CC
+ 0.5 V, with allowable overshoot to V
CC
+ 1.5 V for periods < 20 ns.
2.
3.
4.
5.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F160B3BA110 制造商:Intel 功能描述:NOR Flash, 1M x 16, 48 Pin, Plastic, TSSOP
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TE28F160B3BA90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F160B3BC70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F160B3BC80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
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