參數(shù)資料
型號(hào)： TE28F160B3B90
廠商： INTEL CORP
元件分類： DRAM
英文描述： SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述： 1M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁數(shù)： 10/48頁
文件大小： 304K
代理商： TE28F160B3B90
SMART 3 ADVANCED BOOT BLOCK
E
10
PRELIMINARY
The pin descriptions table details the usage of each device pin.
Table 2. Smart 3 Advanced Boot Block Pin Descriptions
Symbol
Type
Name and Function
A
0
–A
21
INPUT
ADDRESS INPUTS
for memory addresses. Addresses are internally
latched during a program or erase cycle.
28F008B3: A[0-19], 28F016B3: A[0-20], 28F032B3: A[0-21],
28F800B3: A[0-17], 28F800B3: A[0-18], 28F160B3: A[0-19],
28F320B3: A[0-20]
DATA INPUTS/OUTPUTS:
Inputs array data on the second CE# and
WE# cycle during a Program command. Inputs commands to the
Command User Interface when CE# and WE# are active. Data is
internally latched. Outputs array, identifier and status register data. The
data pins float to tri-state when the chip is de-selected or the outputs are
disabled.
DQ
0
–DQ
7
INPUT/OUTPUT
DQ
8
–DQ
15
INPUT/OUTPUT
DATA INPUTS/OUTPUTS:
Inputs array data on the second CE# and
WE# cycle during a Program command. Data is internally latched.
Outputs array and identifier data. The data pins float to tri-state when the
chip is de-selected.
Not included on x8 products.
CE#
INPUT
CHIP ENABLE:
Activates the internal control logic, input buffers,
decoders and sense amplifiers. CE# is active low. CE# high de-selects
the memory device and reduces power consumption to standby levels.
OE#
INPUT
OUTPUT ENABLE:
Enables the device’s outputs through the data
buffers during a read operation. OE# is active low.
WE#
INPUT
WRITE ENABLE:
Controls writes to the Command Register and memory
array. WE# is active low. Addresses and data are latched on the rising
edge of the second WE# pulse.
RP#
INPUT
RESET/DEEP POWER-DOWN:
Uses two voltage levels (V
IL
, V
IH
) to
control reset/deep power-down mode.
When RP# is at logic low, the device is in reset/deep power-down
mode
, which drives the outputs to High-Z, resets the Write State
Machine, and minimizes current levels (I
CCD
).
When RP# is at logic high, the device is in standard operation
.
When RP# transitions from logic-low to logic-high, the device resets all
blocks to locked and defaults to the read array mode.
WP#
INPUT
WRITE PROTECT:
Provides a method for locking and unlocking the two
lockable parameter blocks.
When WP# is at logic low, the lockable blocks are locked
,
preventing program and erase operations to those blocks. If a program
or erase operation is attempted on a locked block, SR.1 and either SR.4
[program] or SR.5 [erase] will be set to indicate the operation failed.
When WP# is at logic high, the lockable blocks are unlocked
and
can be programmed or erased.
See Section 3.3 for details on write protection.
相關(guān)PDF資料
PDF描述
TE28F032B3B90 TVS UNIDIRECT 400W 78V SMA
TE28F320B3BA110 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F016 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F160B3T110 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F160C3 3 Volt Intel Advanced+ Boot Block Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F160B3BA110 制造商:Intel 功能描述:NOR Flash, 1M x 16, 48 Pin, Plastic, TSSOP
TE28F160B3BA110S 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Intel 功能描述:
TE28F160B3BA90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F160B3BC70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
TE28F160B3BC80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory
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