參數(shù)資料
型號： TE28F128P30xxx
廠商： Intel Corp.
英文描述： Intel StrataFlash Embedded Memory
中文描述： 英特爾StrataFlash嵌入式存儲器
文件頁數(shù)： 59/102頁
文件大?。?/td> 1609K
代理商： TE28F128P30XXX
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
59
10.3.5
WAIT Delay
The WAIT Delay (WD) bit controls the WAIT assertion-delay behavior during synchronous burst
reads. WAIT can be asserted either during or one data cycle before valid data is output on
DQ[15:0]. When WD is set, WAIT is deasserted one data cycle
before
valid data (default). When
WD is cleared, WAIT is deasserted
during
valid data.
10.3.6
Burst Sequence
The Burst Sequence (BS) bit selects linear-burst sequence (default). Only linear-burst sequence is
supported.
Table 25
shows the synchronous burst sequence for all burst lengths, as well as the
effect of the Burst Wrap (BW) setting.
Burst Sequence Word Ordering
10.3.7
Clock Edge
The Clock Edge (CE) bit selects either a rising (default) or falling clock edge for CLK. This clock
edge is used at the start of a burst cycle, to output synchronous data, and to assert/deassert WAIT.
10.3.8
Burst Wrap
The Burst Wrap (BW) bit determines whether 4-word, 8-word, or 16-word burst length accesses
wrap within the selected word-length boundaries or cross word-length boundaries. When BW is
set, burst wrapping does not occur (default). When BW is cleared, burst wrapping occurs.
When performing synchronous burst reads with BW set (no wrap), an output delay may occur
when the burst sequence crosses its first device-row (16-word) boundary. If the burst sequence’s
start address is 4-word aligned, then no delay occurs. If the start address is at the end of a 4-word
Table 25.
Start
Addr.
(DEC)
Burst Wrap
(RCR[3])
Burst Addressing Sequence (DEC)
4-Word Burst
(BL[2:0] = 0b001)
8-Word Burst
(BL[2:0] = 0b010)
16-Word Burst
(BL[2:0] = 0b011)
Continuous Burst
(BL[2:0] = 0b111)
0
1
2
3
4
5
6
7
…
14
15
…
0
1
2
3
4
5
6
7
…
14
15
0
0
0
0
0
0
0
0
…
0
0
…
1
1
1
1
1
1
1
1
…
1
1
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
0-1-2-3-4…14-15
1-2-3-4-5…15-0
2-3-4-5-6…15-0-1
3-4-5-6-7…15-0-1-2
4-5-6-7-8…15-0-1-2-3
5-6-7-8-9…15-0-1-2-3-4
6-7-8-9-10…15-0-1-2-3-4-5 6-7-8-9-10-11-12-…
7-8-9-10…15-0-1-2-3-4-5-6 7-8-9-10-11-12-13…
…
14-15-0-1-2…12-13
15-0-1-2-3…13-14
…
0-1-2-3-4…14-15
1-2-3-4-5…15-16
2-3-4-5-6…16-17
3-4-5-6-7…17-18
4-5-6-7-8…18-19
5-6-7-8-9…19-20
6-7-8-9-10…20-21
7-8-9-10-11…21-22
…
14-15-16-17-18…28-29
15-16-17-18-19…29-30
0-1-2-3-4-5-6-…
1-2-3-4-5-6-7-…
2-3-4-5-6-7-8-…
3-4-5-6-7-8-9-…
4-5-6-7-8-9-10…
5-6-7-8-9-10-11…
…
…
…
14-15-16-17-18-19-20-…
15-16-17-18-19-20-21-…
…
…
…
0-1-2-3
1-2-3-4
2-3-4-5
3-4-5-6
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-8
2-3-4-5-6-7-8-9
3-4-5-6-7-8-9-10
4-5-6-7-8-9-10-11
5-6-7-8-9-10-11-12
6-7-8-9-10-11-12-13
7-8-9-10-11-12-13-14
…
0-1-2-3-4-5-6-…
1-2-3-4-5-6-7-…
2-3-4-5-6-7-8-…
3-4-5-6-7-8-9-…
4-5-6-7-8-9-10…
5-6-7-8-9-10-11…
6-7-8-9-10-11-12-…
7-8-9-10-11-12-13…
…
…
14-15-16-17-18-19-20-…
15-16-17-18-19-20-21-…
相關PDF資料
PDF描述
TE28F256P30B85 Intel StrataFlash Embedded Memory
TE28F256P30T85 Intel StrataFlash Embedded Memory
TE28F640P30B85 Intel StrataFlash Embedded Memory
TE28F640P30T85 Intel StrataFlash Embedded Memory
TE28F128P30B85 Intel StrataFlash Embedded Memory
相關代理商/技術參數(shù)
參數(shù)描述
TE28F128P33B85A 功能描述:IC FLASH 128MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
TE28F128P33T85A 功能描述:IC FLASH 128MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應商設備封裝:8-MSOP 包裝:帶卷 (TR)
TE28F160B3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F160B3B110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F160B3B120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*