參數(shù)資料
型號: TE28F020-90
廠商: INTEL CORP
元件分類: DRAM
英文描述: Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; No. of Contacts:8; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight
中文描述: 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
封裝: 0.310 X 0.720 INCH, TSOP-32
文件頁數(shù): 35/38頁
文件大?。?/td> 878K
代理商: TE28F020-90
E
4.11
28F020
35
AC Characteristics
—Alternate CE# Controlled Writes
(1)
—Commercial and
Extended Temperature Products
Versions
28F020-90
(4)
28F020-120
(4)
28F020-150
(4)
Symbol
Characteristics
Notes
Min
Max
Min
Max
Min
Max
Unit
t
AVAV
Write Cycle Time
90
120
150
ns
t
AVEL
Address Set-Up
Time
0
0
0
ns
t
ELAX
Address Hold Time
50
55
55
ns
5
60
60
t
DVEH
Data Set-Up Time
40
45
45
ns
5
50
50
t
EHDX
Data Hold Time
10
10
10
ns
t
EHGL
Write Recovery Time
before Read
6
6
6
μs
t
GHWL
Read Recovery
Time before Write
2
0
0
0
ns
t
WLEL
Write Enable Set-Up
Time before Chip
Enable
0
0
0
ns
t
EHWH
Write Enable Hold
Time
0
0
0
ns
t
ELEH
Write Pulse Width
50
60
70
ns
5
60
60
t
EHEL
Write Pulse Width
High
20
20
20
ns
t
EHEH1
Duration of Prog.
Operation
3
10
10
10
μs
t
EHEH2
Duration of Erase
Operation
3
9.5
9.5
9.5
ms
t
VPEL
V
PP
Set-Up Time to
Chip Enable Low
2
1
1
1
μs
相關(guān)PDF資料
PDF描述
TE28F020-120 28F020 2048K (256K X 8) CMOS FLASH MEMORY
TE28F020-150 28F020 2048K (256K X 8) CMOS FLASH MEMORY
TE28F128P30T85 Intel StrataFlash Embedded Memory
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TE28F032B3T110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY