
28F020
E
20
4.4
DC Characteristics
—TTL/NMOS Compatible—Commercial Products
(Continued)
Limits
Symbol
Parameter
Notes
Min
Typ
(3)
Max
Unit
Test Conditions
V
IL
Input Low
Voltage
–0.5
0.8
V
V
IH
Input High
Voltage
2.0
V
CC
+ 0.5
V
V
OL
Output Low
Voltage
0.45
V
V
CC
= V
CC
Min
I
OL
= 5.8 mA
V
OH1
Output High
Voltage
2.4
V
V
CC
= V
CC
Min
I
OH
= –2.5 mA
V
ID
A
Intelligent
Identifier
Voltage
11.50
13.00
V
I
ID
A
Intelligent
Identifier
Current
1, 2
90
200
μA
A
9
= V
ID
V
PPL
V
PP
during
Read-Only
Operations
0.00
6.5
V
NOTE:
Erase/Program
are Inhibited
when V
PP
= V
PPL
V
PPH
V
PP
during
Read/Write
Operations
11.40
12.60
V
V
LKO
V
CC
Erase/Write
Lock Voltage
2.5
V
NOTES:
1.
All currents are in RMS unless otherwise noted. Typical values at V
CC
= 5.0 V, V
PP
= 12.0 V, T = 25 °C. These currents are
valid for all product versions (packages and speeds).
Not 100% tested: Characterization data available.
“Typicals” are not guaranteed, but based on a limited number of samples from production lots.
2.
3.
4.5
DC Characteristics
—CMOS Compatible—Commercial Products
Limits
Symbol
Parameter
Notes
Min
Typ
(3)
Max
Unit
Test Conditions
I
LI
Input Leakage
Current
1
±1.0
μA
V
CC
= V
CC
Max
V
IN
= V
CC
or V
SS
I
LO
Output Leakage
Current
1
±10
μA
V
CC
= V
CC
Max
V
OUT
= V
CC
or V
SS
I
CCS
V
CC
Standby
Current
1
50
100
μA
V
CC
= V
CC
Max
CE# = V
CC
±0.2 V