- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383992 > TE28F020-90 (INTEL CORP) Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; No. of Contacts:8; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight PDF資料下載
參數(shù)資料
| 型號： | TE28F020-90 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; No. of Contacts:8; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight |
| 中文描述： | 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 |
| 封裝： | 0.310 X 0.720 INCH, TSOP-32 |
| 文件頁數(shù)： | 15/38頁 |
| 文件大?。?/td> | 878K |
| 代理商： | TE28F020-90 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁當(dāng)前第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁
E
28F020
15
Start Erasure
(4)
Data = 00H
Program All
Bytes to 00H
Apply V
PPH
(1)
ADDR = 00H
PLSCNT = 0
Time Out 10 ms
Time Out 6 μs
Read Data
from Device
Data = FFH
Inc
PLSCNT =
1000
Last Address
Erasure
Completed
Erase Error
Write Erase
Set-Up Cmd
Write Erase Cmd
Write Read Cmd
Apply V
PPL
(1)
Apply V
PPL
(1)
Write Erase
Verify Cmd
Increment Addr
Y
Bus
Operation
Comments
Entire Memory Must = 00H
Before Erasure
Use Quick-Pulse
Programming Algorithm
(Figure 4)
Standby
Wait for V
PP
Ramp to V
PPH
(1)
Initialize Addresses and
Pulse-Count
Write
Data = 20H
Write
Data = 20H
Stand-by
Duration of Erase Operation
(t
WHWH2
)
Write
Addr = Byte to Verify;
Data = A0H; Stops Erase
Operation
(3)
Standby
t
WHGL
Read
Read Byte to Verify Erasure
Standby
Compare Output to FFH
Increment Pulse-Count
Standby
Wait for V
PP
Ramp to V
PPL
(1)
N
Y
N
N
N
Y
Y
Command
Set-Up
Erase
Erase
Erase
(2)
Verify
Write
Data = 00H, Resets the
Register for Read Operations
Read
0245_05
NOTES:
1.
2.
See DC Characteristicsfor the value of V
PPH
and V
PPL
.
Erase Verify is performed only after chip-erasure. A final read/compare may be performed (optional) after the register is
written with the Read command.
Refer of Principles of Operation
Caution:
The algorithm
must be followed
to ensure proper and reliable operation of the device.
3.
4.
Figure 5. 28F020 Quick-Erase Algorithm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TE28F020-120 | 28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| TE28F020-150 | 28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| TE28F128P30T85 | Intel StrataFlash Embedded Memory |
| TE28F128P30xxx | Intel StrataFlash Embedded Memory |
| TE28F256P30B85 | Intel StrataFlash Embedded Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F032B3B110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F032B3B90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F032B3BA110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F032B3BA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F032B3T110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。