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參數(shù)資料
| 型號(hào)： | TE28F020-120 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| 中文描述： | 256K X 8 FLASH 12V PROM, 120 ns, PDSO32 |
| 封裝： | 0.310 X 0.720 INCH, TSOP-32 |
| 文件頁(yè)數(shù)： | 8/38頁(yè) |
| 文件大?。?/td> | 878K |
| 代理商： | TE28F020-120 |
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28F020
E
8
28F020
28F020
A
0
-A
17
DQ
0
-DQ
7
CE
#
WE
#
OE
#
A
0
-A
17
DQ
0
-DQ
7
CE
#
BHE
#
OE
#
V
CC
V
CC
V
PP
V
PP
80C186
System Bus
A
1
-A
18
DQ
8
-DQ
15
Address Decoded
Chip Select
DQ
0
-DQ
7
WE
#
WR
#
RD
#
V
CC
V
CC
A
0
0245_03
Figure 3. 28F020 in an 80C186 System
2.0 PRINCIPLES OF OPERATION
Flash memory augments EPROM functionality with
in-circuit electrical erasure and reprogramming.
The 28F020 introduces a command register to
manage this new functionality. The command
register allows for 100% TTL-level control inputs,
fixed
power
supplies
programming, and maximum EPROM compatibility.
during
erasure
and
In the absence of high voltage on the V
PP
pin, the
28F020 is a read-only memory. Manipulation of the
external memory control pins yields the standard
EPROM read, standby, output disable, and
intelligent identifier operations.
The same EPROM read, standby, and output
disable operations are available when high voltage
is applied to the V
PP
pin. In addition, high voltage
on V
PP
enables erasure and programming of the
device. All functions associated with altering
memory contents
—intelligent identifier, erase,
erase verify, program, and program verify—are
accessed via the command register.
Commands are written to the register using
standard microprocessor write timings. Register
contents serve as input to an internal state
machine
which
controls
programming circuitry. Write cycles also internally
latch addresses and data needed for programming
or
erase
operations.
command written to the register, standard
microprocessor read timings output array data,
access the intelligent identifier codes, or output
data for erase and program verification.
the
erase
and
With
the
appropriate
2.1
Integrated Stop Timer
Successive command write cycles define the
durations of program and erase operations;
specifically, the program or erase time durations
are normally terminated by associated Program or
Erase Verify commands. An integrated stop timer
provides simplified timing control over these
operations; thus eliminating the need for maximum
program/erase timing specifications. Programming
and erase pulse durations are minimums only.
When the stop timer terminates a program or erase
operation, the device enters an inactive state and
remains inactive until receiving the appropriate
Verify or Reset command.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TE28F020-150 | 28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| TE28F128P30T85 | Intel StrataFlash Embedded Memory |
| TE28F128P30xxx | Intel StrataFlash Embedded Memory |
| TE28F256P30B85 | Intel StrataFlash Embedded Memory |
| TE28F256P30T85 | Intel StrataFlash Embedded Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F020-150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| TE28F020-90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| TE28F032B3B110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F032B3B90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F032B3BA110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
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