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參數(shù)資料
| 型號： | TE28F020-120 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| 中文描述： | 256K X 8 FLASH 12V PROM, 120 ns, PDSO32 |
| 封裝： | 0.310 X 0.720 INCH, TSOP-32 |
| 文件頁數(shù)： | 31/38頁 |
| 文件大?。?/td> | 878K |
| 代理商： | TE28F020-120 |
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E
NOTES:
1.
Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
Characteristics for Read-Only Operations
2.
Guaranteed by design.
3.
The integrated stop timer terminates the programming/erase operations, thus eliminating the need for a maximum
specification.
4.
See High Speed AC Testing Input/Output Waveform(Figure 8) and High Speed AC Testing Load Circuit(Figure 9) for
testing characteristics.
5.
Minimum Specification for Extended Temperature product.
6.
See Testing Input/Output Waveform(Figure 6) and AC Testing Load Circuit(Figure 7) for testing characteristics.
28F020
31
4.10
Erase and Programming Performance
Limits
Parameter
Notes
Min
Typ
Max
Unit
Chip-Erase Time
1, 3, 4
2
30
Sec
Chip-Program Time
1, 2, 4
4
25
Sec
NOTES:
1.
“Typicals” are not guaranteed, but based on a limited number of samples from production lots. Data taken at 25
°
C, 12.0 V
V
PP
at 0 cycles.
Minimum byte programming time excluding system overhead is 16 μsec (10 μsec program + 6 μsec write recovery), while
maximum is 400 μsec/byte (16 μsec x 25 loops allowed by algorithm). Max chip-programming time is specified lower than
the worst case allowed by the programming algorithm since most bytes program significantly faster than the worst case
byte.
Excludes 00H programming prior to erasure.
Excludes System-Level Overhead.
2.
3.
4.
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F020-150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| TE28F020-90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| TE28F032B3B110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F032B3B90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| TE28F032B3BA110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
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