參數(shù)資料
型號(hào): TE28F020-120
廠商: INTEL CORP
元件分類: DRAM
英文描述: 28F020 2048K (256K X 8) CMOS FLASH MEMORY
中文描述: 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
封裝: 0.310 X 0.720 INCH, TSOP-32
文件頁(yè)數(shù): 30/38頁(yè)
文件大?。?/td> 878K
代理商: TE28F020-120
28F020
E
30
4.9
AC Characteristics
—Write/Erase/Program Only Operations
Commercial and Extended Temperature Products
(1)
Versions
28F020-90
(4)
28F020-120
(4)
28F020-150
(4)
Symbol
Characteristics
Notes
Min
Max
Min
Max
Min
Max
Unit
t
AVAV
/
t
WC
Write Cycle Time
90
120
150
ns
t
AVWL
/
t
AS
Address Set-Up
Time
0
0
0
ns
t
WLAX
/
t
AH
Address Hold Time
40
40
40
ns
5
55
t
DVWH
/
t
DS
Data Set-Up Time
40
40
40
ns
5
55
55
t
WHDX
/
t
DH
Data Hold Time
10
10
10
ns
t
WHGL
Write Recovery Time
before Read
6
6
6
μs
t
GHWL
Read Recovery
Time before Write
2
0
0
0
ns
t
ELWL
/
t
CS
Chip Enable Set-Up
Time before Write
15
15
15
ns
t
WHEH
/
t
CH
Chip Enable Hold
Time
0
0
0
ns
t
WLWH
/
t
WP
Write Pulse Width
40
60
60
ns
5
55
55
t
WHWL
/
t
WPH
Write Pulse Width
High
20
20
20
ns
t
WHWH1
Duration of
Programming
Operation
3
10
10
10
μs
t
WHWH2
Duration of Erase
Operation
3
9.5
9.5
9.5
ms
t
VPEL
V
PP
Set-Up Time to
Chip Enable Low
2
1
1
1
μs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F020-150 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY
TE28F020-90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY
TE28F032B3B110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F032B3B90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F032B3BA110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY