參數(shù)資料
型號(hào)： TE28F016C3T90
廠商： Intel Corp.
英文描述： 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述： 3伏高級(jí)啟動(dòng)塊8 - ，16 - ，32 - Mbit閃存家庭
文件頁(yè)數(shù)： 3/59頁(yè)
文件大小： 384K
代理商： TE28F016C3T90
E
3 VOLT ADVANCED+ BOOT BLOCK
3
PRODUCT PREVIEW
CONTENTS
PAGE
PAGE
1.0 INTRODUCTION .............................................5
1.1 3 Volt Advanced+ Boot Block Flash Memory
Enhancements............................................5
1.2 Product Overview.........................................6
2.0 PRODUCT DESCRIPTION..............................6
2.1 Package Pinouts..........................................6
2.2 Block Organization.....................................10
2.2.1 Parameter Blocks................................10
2.2.2 Main Blocks.........................................10
3.0 PRINCIPLES OF OPERATION .....................11
3.1 Bus Operation............................................11
3.1.1 Read....................................................11
3.1.2 Output Disable.....................................11
3.1.3 Standby...............................................11
3.1.4 Reset...................................................12
3.1.5 Write....................................................12
3.2 Modes of Operation....................................12
3.2.1 Read Array..........................................12
3.2.2 Read Configuration..............................13
3.2.3 Read Status Register ..........................13
3.2.3.1 Clearing the Status Register.........13
3.2.4 Read Query.........................................13
3.2.5 Program Mode.....................................14
3.2.5.1 Suspending and Resuming
Program.......................................14
3.2.6 Erase Mode.........................................14
3.2.6.1 Suspending and Resuming Erase.15
3.3 Flexible Block Locking................................19
3.3.1 Locking Operation ...............................19
3.3.2 Locked State .......................................19
3.3.3 Unlocked State....................................19
3.3.4 Lock-Down State.................................19
3.3.5 Reading a Block’s Lock Status ............20
3.3.6 Locking Operations during Erase
Suspend.............................................20
3.3.7 Status Register Error Checking ...........20
3.4 128-Bit Protection Register.........................21
3.4.1 Reading the Protection Register..........21
3.4.2 Programming the Protection Register..21
3.4.3 Locking the Protection Register...........22
3.5 V
PP
Program and Erase Voltages...............22
3.5.1 Easy-12 V Operation for Fast
Manufacturing Programming...............22
3.5.2 V
PP
≤
V
PPLK
for Complete Protection ...22
3.5.3 V
PP
Usage...........................................22
3.6 Power Consumption...................................23
3.6.1 Active Power (Program/Erase/Read)...23
3.6.2 Automatic Power Savings (APS) .........23
3.6.3 Standby Power....................................23
3.6.4 Deep Power-Down Mode.....................24
3.7 Power-Up/Down Operation.........................24
3.7.1 RP# Connected to System Reset ........24
3.7.2 V
CC
, V
PP
and RP# Transitions.............24
3.8 Power Supply Decoupling ..........................24
4.0 ABSOLUTE MAXIMUM RATINGS................25
4.2 Operating Conditions..................................25
4.3 Capacitance...............................................26
4.4 DC Characteristics .....................................26
4.5 AC Characteristics—Read Operations—
Extended Temperature..............................30
4.6 AC Characteristics—Write Operations—
Extended Temperature..............................32
4.7 Erase and Program Timings.......................33
4.8 Reset Operations .......................................35
5.0 ORDERING INFORMATION..........................36
6.0 ADDITIONAL INFORMATION.......................37
APPENDIX A: WSM Current/Next States..........38
APPENDIX B: Program/Erase Flowcharts........40
APPENDIX C: Common Flash Interface Query
Structure......................................................46
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