參數(shù)資料
型號(hào)： TE28F016C3T90
廠商： Intel Corp.
英文描述： 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述： 3伏高級(jí)啟動(dòng)塊8 - ，16 - ，32 - Mbit閃存家庭
文件頁(yè)數(shù)： 22/59頁(yè)
文件大?。?/td> 384K
代理商： TE28F016C3T90
3 VOLT ADVANCED+ BOOT BLOCK
E
22
PRODUCT PREVIEW
Any attempt to address Protection Program
commands outside the defined protection register
address space will result in a Status Register error
(Program Error bit SR.4 will be set to 1). Attempting
to program or to a previously locked protection
register segment will result in a status register error
(program error bit SR.4 and lock error bit SR.1 will
be set to 1).
3.4.3
LOCKING THE PROTECTION
REGISTER
The user-programmable segment of the protection
register is lockable by programming Bit 1 of the
PR-LOCK location to 0. Bit 0 of this location is
programmed to 0 at the Intel factory to protect the
unique device number. This bit is set using the
Protection Program command to program
“FFFD” to
the PR-LOCK location. After these bits have been
programmed, no further changes can be made to
the values stored in the protection register.
Protection Program commands to a locked section
will result in a status register error (Program Error
bit SR.4 and Lock Error bit SR.1 will be set to 1).
Protection register lockout state is not reversible.
4 Words
Factory Programmed
4 Words
User Programmed
1 Word Lock
88H
85H
84H
81H
80H
0645_05
Figure 5. Protection Register Memory Map
3.5
V
PP
Program and Erase
Voltages
Intel’s 3 Volt Advanced+ Boot Block products
provide in-system writes plus a V
PP
pin for 12 V
production programming and
protection.
complete
write
3.5.1
EASY-12 V OPERATION FOR FAST
MANUFACTURING PROGRAMMING
Intel’s 3 Volt Advanced+ Boot Block products
provide in-system programming and erase in the
2.7 V–3.6 V
range.
programming,
3 Volt
Advanced+
includes a low-cost, backward-compatible 12 V
programming feature.
For
fast
production
Boot
Block
When V
PP
is between 1.65 V and 3.6 V, all program
and erase current is drawn through the V
CC
pin.
Note that if V
PP
is driven by a logic signal,
V
IH =
1.65 V. That is, V
PP
must remain above 1.65 V
to perform in-system flash modifications. When V
PP
is connected to a 12 V power supply, the device
draws program and erase current directly from the
V
PP
pin. This eliminates the need for an external
switching transistor to control the voltage V
PP
.
Figure 6 shows examples of how the flash power
supplies can be configured for various usage
models.
The 12 V V
PP
mode enhances programming
performance during the short period of time typically
found in manufacturing processes; however, it is
not intended for extended use. 12 V may be applied
to V
PP
during program and erase operations for a
maximum of 1000 cycles on the main blocks and
2500 cycles on the parameter blocks. V
PP
may be
connected to 12 V for a total of 80 hours maximum.
Stressing the device beyond these limits may cause
permanent damage.
3.5.2
V
≤
V
FOR COMPLETE
PROTECTION
In addition to the flexible block locking, the V
PP
programming voltage can be held low for absolute
hardware write protection of all blocks in the flash
device. When V
PP
is below V
PPLK
, any program or
erase operation will result in a error, prompting the
corresponding status register bit (SR.3) to be set.
3.5.3
V
PP
USAGE
The V
PP
pin is used for two functions: Absolute data
protection and fast production programming.
When V
PP
≤
V
PPLK
, then all program or erase
operations to the device are inhibited, providing
absolute data protection.
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