- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384954 > TC58FV321 (Toshiba Corporation) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號： | TC58FV321 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY |
| 中文描述： | 東芝馬鞍山數(shù)字集成電路硅柵CMOS 32兆位（4米× 8位/ 2米× 16位）的CMOS閃存 |
| 文件頁數(shù)： | 16/48頁 |
| 文件大小： | 560K |
| 代理商： | TC58FV321 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁當(dāng)前第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁
TC58FVT321/B321FT/XB-70,-10
2002-08-06 16/48
HARDWARE SEQUENCE FLAGS
The TC58FVT321/B321 has a Hardware Sequence flag which allows the device status to be determined during an
auto mode operation. The output data is read out using the same timing as that used when CE
=
OE
=
V
IL
in
Read Mode. The
BY
/
RY
output can be either High or Low.
The device re-enters Read Mode automatically after an auto mode operation has been completed successfully. The
Hardware Sequence flag is read to determine the device status and the result of the operation is verified by
comparing the read-out data with the original data.
STATUS
DQ7
DQ6
DQ5
DQ3
DQ2
BY
/
RY
Auto Programming
7
DQ
Toggle
0
0
1
0
Read in Program Suspend
(1)
Data
Data
Data
Data
Data
High-Z
Selected
(2)
0
Toggle
0
0
Toggle
0
Erase Hold Time
Not-selected
(3)
0
Toggle
0
0
1
0
Selected
0
Toggle
0
1
Toggle
0
In Auto
Erase
Auto Erase
Not-selected
0
Toggle
0
1
1
0
Selected
1
1
0
0
Toggle
High-Z
Read
Not-selected
Data
Data
Data
Data
Data
High-Z
Selected
7
DQ
Toggle
0
0
Toggle
0
In Progress
In Erase
Suspend
Programming
Not-selected
7
DQ
Toggle
0
0
1
0
Auto Programming
7
DQ
Toggle
1
0
1
0
Auto Erase
0
Toggle
1
1
NA
0
Time Limit
Exceeded
Programming in Erase Suspend
7
DQ
Toggle
1
0
NA
0
Notes: DQ outputs cell data and
DQ0 and DQ1 pins are reserved for future use.
0 is output on DQ0, DQ1 and DQ4.
(1) Data output from an address to which Write is being performed is undefined.
(2) Output when the block address selected for Auto Block Erase is specified and data is read from there.
During Auto Chip Erase, all blocks are selected.
(3) Output when a block address not selected for Auto Block Erase
of same bank as selected block is specified and data is
read from there.
BY
/
RY
goes High-Impedence when the operation has
been completed.
DQ7 ( polling)
DATA
During an Auto-Program or auto-erase operation, the device status can be determined using the data polling
function. DATA polling begins on the rising edge of WE in the last bus cycle. In an Auto-Program operation,
DQ7 outputs inverted data during the programming operation and outputs actual data after programming has
finished. In an auto-erase operation, DQ7 outputs 0 during the Erase operation and outputs 1 when the Erase
operation has finished. If an Auto-Program or auto-erase operation fails, DQ7 simply outputs the data.
When the operation has finished, the address latch is reset. Data polling is asynchronous with the OE signal.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TC58NS256DC | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM) |
| TC58V32ADC | 32M Bit (4M×8Bits ) CMOS Flash Memory(4M×8位CMOS閃速存儲器) |
| TC59RM716RB-6 | 128M Bits（256K x16x32Banks）DRAM(128M位（256K x16x32組）動態(tài)RAM) |
| TC59RM716RB-7 | 128M Bits（256K x16x32Banks）DRAM(128M位（256K x16x32組）動態(tài)RAM) |
| TC59RM716RB-8 | 128M Bits（256K x16x32Banks）DRAM(128M位（256K x16x32組）動態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC58FVB004FT-10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4M (512K x 8) BIT CMOS FLASH MEMORY |
| TC58FVB004FT-12 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4M (512K x 8) BIT CMOS FLASH MEMORY |
| TC58FVB004FT-85 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:4M (512K x 8) BIT CMOS FLASH MEMORY |
| TC58FVB160A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC58FVB160AF | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。