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參數(shù)資料
| 型號： | TB28F008SA-100 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY |
| 中文描述： | 1M X 8 FLASH 12V PROM, 100 ns, PDSO44 |
| 封裝： | 0.525 X 1.110 INCH, PLASTIC, SOP-44 |
| 文件頁數(shù)： | 22/33頁 |
| 文件大?。?/td> | 466K |
| 代理商： | TB28F008SA-100 |
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28F008SA
DC CHARACTERISTICS: EXTENDED TEMPERATURE OPERATION
(Continued)
Symbol
Parameter
Notes
Min
Typ
Max
Unit
Test Condition
V
IL
Input Low Voltage
b
0.5
0.8
V
V
IH
Input High Voltage
2.0
V
CC
a
0.5
V
V
OL
Output Low Voltage
3
0.45
V
V
CC
e
V
CC
Min
I
OL
e
5.8 mA
V
CC
e
V
CC
Min
I
OH
e b
2.5 mA
I
OH
e b
2.5
m
A
V
CC
e
V
CC
Min
I
OH
e b
100
m
A
V
CC
e
V
CC
Min
V
OH1
Output High Voltage
(TTL)
3
2.4
V
V
OH2
Output High Voltage
(CMOS)
0.85 V
CC
V
V
CC
b
0.4
V
PPL
V
PP
during Normal
Operations
4
0.0
6.5
V
V
PPH
V
PP
during Erase/Write
Operations
11.4
12.0
12.6
V
V
LKO
V
CC
Erase/Write Lock
Voltage
2.0
V
CAPACITANCE
(5)
T
A
e
25
§
C, f
e
1 MHz
Symbol
Parameter
Typ
Max
Unit
Condition
C
IN
Input Capacitance
6
8
pF
V
IN
e
0V
V
OUT
e
0V
C
OUT
Output Capacitance
8
12
pF
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
e
5.0V, V
PP
e
12.0V, T
e
25
§
C. These currents
are valid for all product versions (packages and speeds).
2. I
CCES
is specified with the device deselected. If the 28F008SA is read while in Erase Suspend Mode, current draw is the
sum of I
CCES
and I
CCR
.
3. Includes RY/BY
Y
.
4. Block Erases/Byte Writes are inhibited when V
PP
e
V
PPL
and not guaranteed in the range between V
PPH
and V
PPL
.
5. Sampled, not 100% tested.
22
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TB28F008SC-100 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMILY 4, 8, AND 16 MBIT |
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| TB28F016SC-110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMILY 4, 8, AND 16 MBIT |
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| TB28F200B5-B80 | 制造商:Intel 功能描述:NOR Flash, 128K x 16, 44 Pin, Plastic, SOP |
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