- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382570 > STY25NA60 (意法半導體) N-Channel 600V-0.225Ω-25A- Max247 Extremely Low Gate Charge Power MOSFET(N溝道功率MOSFET) PDF資料下載
參數(shù)資料
| 型號： | STY25NA60 |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel 600V-0.225Ω-25A- Max247 Extremely Low Gate Charge Power MOSFET(N溝道功率MOSFET) |
| 中文描述： | N溝道600V的0.225Ω- 25A條，Max247柵極電荷極低功率MOSFET（不適用溝道功率MOSFET的） |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 54K |
| 代理商： | STY25NA60 |
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1998 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
.
STY25NA60
5/5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STY30NA50 | N-Channel Enhancement Mode Fast Power MOS Transistor(Ｎ溝道增強模式功率ＭＯＳ晶體管) |
| STY34NB50F | Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Current, It av:16A; Forward Current:16A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes |
| STY60NK30Z | N-CHANNEL 300V - 0.033ohm - 60A Max247 Zener-Protected SuperMESH Power MOSFET |
| STZT2222A | Medium Power Amplifier(硅平面外延工藝NPN晶體管) |
| STZT2222 | MEDIUM POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STY30N50E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| STY30NA50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STY30NK90Z | 功能描述:MOSFET N-Ch 900 Volt 26 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STY34NB50 | 功能描述:MOSFET N-Ch 500 Volt 34 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STY34NB50F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 500V - 0.11ohm - 34 A - Max247 PowerMESH MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。