參數(shù)資料
型號(hào): STR751FR0
廠商: 意法半導(dǎo)體
元件分類(lèi): ADC
英文描述: Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.02 to 30.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
中文描述: 的ARM7TDMI - S⑩32位微控制器的閃存,新措施,3性病16位定時(shí)器,PWM定時(shí)器,快速的10位ADC和I2C,UART的,過(guò)磷酸鈣,USB和CAN
文件頁(yè)數(shù): 50/84頁(yè)
文件大?。?/td> 997K
代理商: STR751FR0
Electrical parameters
STR750Fxx STR751Fxx STR752Fxx STR755Fxx
54/84
5.3.8
I/O port pin characteristics
General characteristics
Subject to general operating conditions for VDD_IO and TA unless otherwise specified.
Table 32.
General characteristics
I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max Unit
VIL
Input low level voltage
TTL ports
0.8
V
VIH
Input high level voltage
2
Vhys
Schmitt trigger voltage
hysteresis(1)
1.
Hysteresis voltage between Schmitt trigger switching levels.
400
mV
IINJ(PIN)
Injected Current on any I/O pin
± 4
mA
ΣIINJ(PIN
(2)
2.
When the current limitation is not possible, the VIN absolute maximum rating must be respected, otherwise
refer to IINJ(PIN) specification. A positive injection is induced by VIN>VDD_IO while a negative injection is
induced by VIN<VSS. Refer to Section 5.2 on page 32 for more details.
Total injected current (sum of all
I/O and control pins)
± 25
Ilkg
Input leakage current on robust
pins
See Section 5.3.12 on page 72
Input leakage current(3)
3.
Leakage could be higher than max. if negative current is injected on adjacent pins.
VSSVINVDD_IO
±1
A
IS
Static current consumption(4)
4.
Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of
the I/O for example or an external pull-up or pull-down resistor (see Figure 25). Data based on design
simulation and/or technology characteristics, not tested in production.
Floating input mode
200
RPU
Weak pull-up equivalent
resistor(5)
5.
The RPU pull-up and RPD pull-down equivalent resistor are based on a resistive transistor.
VIN=VSS
VDD_IO=3.3 V
50
95
200
k
VDD_IO=5 V
20
58
150
k
RPD
Weak pull-down equivalent
resistor(5)
VIN=VDD_IO
VDD_IO=3.3 V
25
80
180
k
VDD_IO=5 V
20
50
120
k
CIO
I/O pin capacitance
5
pF
tw(IT)in
External interrupt/wake-up lines
pulse time(6)
6.
To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured
as an external interrupt source.
2
TAP
B
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STR751FR0H6 功能描述:ARM微控制器 - MCU 16/32-BITS MICROS RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:72 MHz 程序存儲(chǔ)器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT
STR751FR0T6 功能描述:ARM微控制器 - MCU 32-BITS MICROS RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:72 MHz 程序存儲(chǔ)器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT
STR751FR0T6/MIN 制造商:STMicroelectronics 功能描述:
STR751FR1 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:ARM7TDMI-S⑩ 32-bit MCU with Flash, SMI, 3 std 16-bit timers, PWM timer, fast 10-bit ADC, I2C, UART, SSP, USB and CAN
STR751FR1H6 功能描述:ARM微控制器 - MCU 16/32-BITS MICROS RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:72 MHz 程序存儲(chǔ)器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT