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參數(shù)資料
| 型號(hào)： | STN1HNC60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh⑩II MOSFET |
| 中文描述： | N溝道600V的- 7ohm - 0.4A - SOT - 223封裝MOSFET的第二PowerMesh⑩ |
| 文件頁(yè)數(shù)： | 8/8頁(yè) |
| 文件大?。?/td> | 260K |
| 代理商： | STN1HNC60 |
STN1HNC60
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PDF描述 |
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| STN1NC60 | N-CHANNEL 600V - 12ohm - 0.3A - SOT-223 PowerMesh⑩II MOSFET |
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| STN2NE10 | N - CHANNEL 100V - 0.33 ohm - 2A - SOT-223 STripFET POWER MOSFET |
| STN2NF06L | N-CHANNEL 60V - 0.1 ohm - 2A SOT-223 STripFET⑩ II POWER MOSFET |
| STN2NF10 | N-CHANNEL 100V - 0.23ohm - 2A SOT-223 STripFET⑩ II POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STN1HNK60 | 功能描述:MOSFET 600V 8Ohm 1A N-Chnnl Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STN1N20 | 功能描述:MOSFET N-Ch 200 Volt 1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STN1NB80 | 功能描述:MOSFET N-Ch 800 Volt 1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STN1NC60 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STN1NF10 | 功能描述:MOSFET N-Ch 100 Volt 1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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