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參數(shù)資料
| 型號： | STGD7NB60KT4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:65V; Capacitance:50pF; Holding Current:150mA |
| 中文描述： | N溝道600V的IGBT的第7A TO-220/TO-220FP/DPAK/D2PAK POWERMESH |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 710K |
| 代理商： | STGD7NB60KT4 |
STGP7NB60K/STGP7NB60KFP/STGD7NB60K/STGP7NB60KD/STGB7NB60KD/STGP7NB60KDFP
2/14
ABSOLUTE MAXIMUM RATINGS
Symbol
(
n
) Pulse width limited by safe operating area
(1)
For “D” version only
THERMAL DATA
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
MAIN PARAMETERS
Symbol
Parameter
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 125 °C
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250μA
V
CE(sat)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
= 7 A, Tc =100°C
Parameter
Value
Unit
TO-220
D
2
PAK
TO-220FP
DPAK
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
(
n
)
I
f
(1)
I
fm
(1)
P
TOT
Collector-Emitter Voltage (V
GS
= 0)
600
V
Emitter-Collector Voltage
20
V
Gate-Emitter Voltage
±20
V
Collector Current (continuous) at T
C
= 25°C
Collector Current (continuous) at T
C
= 125°C
14
14
14
A
7
7
7
A
Collector Current (pulsed)
50
50
50
A
Forward Current
7
A
Forward Current Pulsed
56
A
Total Dissipation at T
C
= 25°C
Derating Factor
95
30
90
W
0.64
0.28
0.64
W/°C
V
ISO
T
stg
T
j
Insulation Withstand Voltage A.C.
--
2500
--
V
Storage Temperature
– 55 to 150
150
°C
Max. Operating Junction Temperature
TO-220
D
2
PAK
1.32
TO-220FP
DPAK
Rthj-case
Rthj-amb
Rthc-h
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-heatsink Typ
4.17
1.4
100
°C/W
°C/W
°C/W
62.5
0.5
Test Conditions
I
C
= 250 μA, V
GE
= 0
Min.
600
Typ.
Max.
Unit
V
V
CE
= Max Rating, T
C
= 25 °C
50
500
μA
μA
V
GE
= ±20V , V
CE
= 0
±100
nA
5
7
V
V
GE
= 15V, I
C
= 7 A
2.3
1.9
2.8
V
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STGP7NB60KDFP | CAPACITOR, BESTCAP 45 MILLI FARAD 4.5VCAPACITOR, BESTCAP 45 MILLI FARAD 4.5V; Capacitance:45mF; Voltage rating, DC:4.5V; Capacitor dielectric type:Electronic; Series:BestCap; Temp, op. max:70(degree C); Temp, op. min:-20(degree C); |
| STGD7NB60K | N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGP7NB60KFP | N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGP7NB60K | N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGD7NB60St4 | N-CHANNEL 7A - 600V DPAK Power MESH IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGD7NB60MT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD7NB60S | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD7NB60ST4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD7NC60H | 制造商:STMicroelectronics 功能描述:Transistor IGBT N-Ch 600V 25A DPAK |
| STGD7NC60HT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 14 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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