參數(shù)資料
型號(hào)： STGB7NC60HDT4
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT
中文描述： N溝道第14A - 600V的- TO-220/TO-220FP/DPAK非常IGBT的快速PowerMESH
文件頁(yè)數(shù)： 8/15頁(yè)
文件大小： 430K
代理商： STGB7NC60HDT4
STGP7NC60HD - STGF7NC60HD - STGB7NC60HD
8/15
Figure 19: Ic vs Frequency
For a fast IGBT suitable for high frequency appli-
cations, the typical collector current vs. maximum
operating frequency curve is reported. That fre-
quency is defined as follows:
f
MAX
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
1) The maximum power dissipation is limited by
maximum junction to case thermal resistance:
P
D
=
T / R
THJ-C
considering
T = T
J
- T
C
= 125
°
C- 75
°
C = 50
°
C
2) The conduction losses are:
P
C
= I
C
* V
CE(SAT)
*
δ
with 50% of duty cycle, V
CESAT
typical value
@125
°
C.
3) Power dissipation during ON & OFF commuta-
tions is due to the switching frequency:
P
SW
= (E
ON
+ E
OFF
) * freq.
4) Typical values @ 125
°
C for switching losses are
used (test conditions: V
CE
= 390V, V
GE
= 15V,
R
G
= 3.3 Ohm). Furthermore, diode recovery en-
ergy is included in the E
ON
(see note 2), while the
tail of the collector current is included in the E
OFF
measurements (see note 3).
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGB7NC60HT4 功能描述:IGBT 晶體管 IGBT 600 V Power Bipolar D2PAK Trans RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGB8NC60K 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT
STGB8NC60KD 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:600 V - 8 A - short circuit rugged IGBT
STGB8NC60KDT4 功能描述:IGBT 晶體管 N Ch 100V 0.033 Ohm 25A Pwr MOSFET RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGB8NC60KT4 功能描述:IGBT 晶體管 N Ch 1000V 2.5A Pwr MOSFET RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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