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參數(shù)資料
| 型號： | STGB7NC60HDT4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT |
| 中文描述： | N溝道第14A - 600V的- TO-220/TO-220FP/DPAK非常IGBT的快速PowerMESH |
| 文件頁數(shù)： | 2/15頁 |
| 文件大?。?/td> | 430K |
| 代理商： | STGB7NC60HDT4 |
STGP7NC60HD - STGF7NC60HD - STGB7NC60HD
2/15
Table 3: Absolute Maximum ratings
Symbol
( )
Pulse width limited by max. junction temperature.
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS
(T
CASE
=25
°
C UNLESS OTHERWISE SPECIFIED)
Table 5: Main Parameters
Symbol
Parameter
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
CES
Collector cut-off Current
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 125
°
C
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250 μA
V
CE(sat)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
= 7 A, Tc= 125
°
C
(#) Calculated according to the iterative formula:
Parameter
Value
Unit
STGP7NC60HD
STGB7NC60HD
STGF7NC60HD
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
( )
I
F
P
TOT
Collector-Emitter Voltage (V
GS
= 0)
600
V
Emitter-Collector Voltage
20
V
Gate-Emitter Voltage
±20
V
Collector Current (continuous) at T
C
= 25
°
C (#)
Collector Current (continuous) at T
C
= 100
°
C (#)
25
10
A
14
6
A
Collector Current (pulsed)
50
A
Diode RMS Forward Current at T
C
= 25
°
C
Total Dissipation at T
C
= 25
°
C
Derating Factor
20
A
80
25
W
0.64
0.20
W/
°
C
V
ISO
T
stg
T
j
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25
°
C)
--
2500
V
Storage Temperature
–
55 to 150
°
C
Operating Junction Temperature
Min.
Typ.
Max.
1.56
Rthj-case
Thermal Resistance Junction-case
TO-220
D2PAK
TO-220FP
°
C/W
5.0
62.5
°
C/W
°
C/W
°
C
Rthj-amb
T
L
Thermal Resistance Junction-ambient
Maximum Lead Temperature for Soldering Purpose
(1.6 mm from case, for 10 sec.)
300
Test Conditions
I
C
= 1 mA, V
GE
= 0
Min.
600
Typ.
Max.
Unit
V
V
CE
= Max Rating, T
C
= 25
°
C
10
1
μA
mA
V
GE
= ± 20V , V
CE
= 0
±100
nA
3.75
5.75
V
V
GE
= 15V, I
C
= 7 A
1.85
1.7
2.5
V
V
ICTC
)
–
C
–
)
TCIC
(
)
×
RTHJ
=
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| STGB7NC60HT4 | 功能描述:IGBT 晶體管 IGBT 600 V Power Bipolar D2PAK Trans RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB8NC60K | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT |
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| STGB8NC60KDT4 | 功能描述:IGBT 晶體管 N Ch 100V 0.033 Ohm 25A Pwr MOSFET RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB8NC60KT4 | 功能描述:IGBT 晶體管 N Ch 1000V 2.5A Pwr MOSFET RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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