參數(shù)資料
型號: STGB10NB40LZ
廠商: 意法半導體
英文描述: N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT
中文描述: N通道鉗位20A條-采用D2PAK IGBT的內(nèi)部鉗位PowerMESH
文件頁數(shù): 3/10頁
文件大?。?/td> 481K
代理商: STGB10NB40LZ
3/10
STGB10NB40LZ
ELECTRICAL CHARACTERISTICS
(CONTINUED)
DYNAMIC
Symbol
Parameter
g
fs
Forward Transconductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer
Capacitance
Q
g
Gate Charge
FUNCTIONAL CHARACTERISTICS
Symbol
II
Latching Current
SWITCHING ON
Symbol
t
d(on)
t
r
(di/dt)
on
SWITCHING OFF
Symbol
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(**)
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(**)
(1)Pulse width limited by max. junction temperature.
(**)Losses Include Also the Tail
Test Conditions
Min.
Typ.
Max.
Unit
V
CE
= 15 V
,
I
C
= 10 A
V
CE
= 25V, f = 1 MHz, V
GE
= 0
18
S
1300
pF
105
pF
12
pF
V
CE
= 328V, I
C
= 10 A,
V
GE
= 5V
28
nC
Parameter
Test Conditions
Min.
Typ.
40
Max.
Unit
A
V
Clamp
= 328 V, T
C
= 125 °C
R
GOFF
= 1K
, V
GE
= 5 V
R
GOFF
= 1K
, L = 1 mH ,
Tc= 125°C
U.I.S.
Functional Test Open
Secondary Coil
13
A
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ns
Turn-on Delay Time
V
CC
= 328 V, I
C
= 10 A
R
G
= 1K
, V
GE
= 5 V
1300
Rise Time
270
ns
Turn-on Current Slope
V
CC
= 328 V, I
C
= 10 A
R
G
=1K
, V
GE
= 5 V
V
CC
= 328 V, I
C
= 10 A, T
C
= 25 °C
R
G
= 1K
, V
GE
= 5 V, T
C
= 125 °C
60
A/μs
Eon
Turn-on Switching Losses
2.4
2.6
mJ
mJ
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Cross-over Time
V
cc
= 328 V, I
C
= 10 A,
R
GE
= 1K
, V
GE
= 5 V
3.6
μs
Off Voltage Rise Time
2
μs
Delay Time
8
μs
Fall Time
1.4
μs
Turn-off Switching Loss
5
mJ
Cross-over Time
V
cc
= 328 V, I
C
= 10 A,
R
GE
= 1K
, V
GE
= 5 V
Tj = 125 °C
5.7
μs
Off Voltage Rise Time
2.7
μs
Delay Time
9.2
μs
Fall Time
2.8
μs
Turn-off Switching Loss
8.7
mJ
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