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參數(shù)資料
| 型號(hào)： | STGB10NB40LZ |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT |
| 中文描述： | N通道鉗位20A條-采用D2PAK IGBT的內(nèi)部鉗位PowerMESH |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 481K |
| 代理商： | STGB10NB40LZ |
STGB10NB40LZ
2/10
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
Collector-Emitter Voltage (V
GS
= 0)
V
ECR
Emitter-Collector Voltage
V
GE
Gate-Emitter Voltage
I
C
Collector Current (continuos) at T
C
= 25°C
I
C
Collector Current (continuos) at T
C
= 100°C
I
CM
( )
Collector Current (pulsed)
( )
Pulse width limited by safe operating area
THERMAL DATA
Rthj-case
Rthj-amb
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
BV
(CES)
Clamped Voltage
I
C
= 2 mA, V
GE
= 0,
Tj= - 40°C to 150°C
BV
(ECR)
Emitter Collector Break-down
Voltage
BV
GE
Gate Emitter Break-down
Voltage
ON (1)
Symbol
V
GE(th)
Parameter
Value
Unit
CLAMPED
V
18
V
CLAMPED
V
20
A
10
A
40
A
Eas
Single Pulse Energy Tc = 25°C
300
mJ
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
150
W
1
W/°C
E
SD
T
stg
T
j
ESD (Human Body Model)
4
KV
Storage Temperature
– 55 to 175
°C
Operating Junction Temperature
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1
°C/W
°C/W
62.5
Test Conditions
Min.
380
Typ.
410
Max.
440
Unit
V
I
C
= 75 mA, Tj= 25°C
18
V
I
G
= ± 2 mA
12
16
V
I
CES
Collector cut-off Current
(V
GE
= 0)
V
CE
= 15 V, V
GE
= 0 ,T
j
= 150 °C
V
CE
= 200 V, V
GE
= 0 ,T
j
= 150°C
V
GE
= ± 10V , V
CE
= 0
10
μA
100
μA
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
± 700
μA
R
GE
Gate Emitter Resistance
20
K
Parameter
Test Conditions
Min.
0.6
Typ.
Max.
2.2
Unit
V
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250 μA,
T
C
= - 40°C to 150°C
V
GE
=4.5V, I
C
= 10 A, Tj= 25°C
V
GE
=4.5V, I
C
= 20 A, Tj= 25°C
V
CE(SAT)
Collector-Emitter Saturation
Voltage
1.2
1.8
V
1.3
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGB10NB40LZT4 | 功能描述:IGBT 晶體管 N-Ch Clamped 20 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB10NB60S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT |
| STGB10NB60ST4 | 功能描述:IGBT 晶體管 N Ch 10A 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB10NC60HD | 制造商:STMicroelectronics 功能描述:Transistor IGBT N-Ch 600V 20A D2PAK |
| STGB10NC60HD_0710 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 10A - TO-220 - D2PAK - TO-220FP very fast PowerMESH IGBT |
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