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參數(shù)資料
| 型號： | STE48NM50 |
| 廠商： | 意法半導體 |
| 英文描述： | CAP 120PF 50V CERAMIC MONO 5% |
| 中文描述： | N溝道500V - 0.08ohm - 48A條⑩1000V的集電極的MDmesh功率MOSFET |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 273K |
| 代理商： | STE48NM50 |
STE48NM50
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
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previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
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PDF描述 |
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| STE48NM60 | N-CHANNEL 600V 0.09 OHM 48A ISOTOP MDMESH POWER MOSFET |
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| STE53NA50 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STF12PF06 | P-CHANNEL 60V - 0.18 ohm - 12A TO-220/TO-220FP STripFET II POWER MOSFET |
| STF9NK80Z | N-CHANNEL 800V -0.9ohm - 7.5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STE48NM60 | 功能描述:MOSFET N-CH 650V 48A ISOTOP RoHS:否 類別:半導體模塊 >> FET 系列:MDmesh™ 標準包裝:10 系列:* |
| STE50DE100 | 功能描述:兩極晶體管 - BJT POWER MOSFET RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| STE50DE100_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Hybrid emitter switched bipolar transistor ESBT 1000V - 50A - 0.026 ohm |
| STE50N40 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 400V V(BR)DSS | 50A I(D) |
| STE515AC | 制造商:CALIBER 制造商全稱:Caliber Electronics Inc. 功能描述:6 Pad Clipped Sinewave TCXO Oscillator |
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