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參數(shù)資料
| 型號： | STE48NM50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | CAP 120PF 50V CERAMIC MONO 5% |
| 中文描述： | N溝道500V - 0.08ohm - 48A條⑩1000V的集電極的MDmesh功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 273K |
| 代理商： | STE48NM50 |
1/8
September 2002
STE48NM50
N-CHANNEL 500V - 0.08
- 48A ISOTOP
MDmeshPower MOSFET
n
TYPICAL R
DS
(on) = 0.08
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
100% AVALANCHE TESTED
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESISTANCE
n
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
l
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STE48NM50
500V
< 0.1
48 A
Parameter
Value
Unit
500
V
500
V
±30
V
48
A
30
A
192
A
450
W
3.6
15
W/°C
V/ns
–65 to 150
°C
150
°C
(1) I
SD
≤
48A, di/dt
≤
4
00A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STE48NM60 | 功能描述:MOSFET N-CH 650V 48A ISOTOP RoHS:否 類別:半導(dǎo)體模塊 >> FET 系列:MDmesh™ 標(biāo)準(zhǔn)包裝:10 系列:* |
| STE50DE100 | 功能描述:兩極晶體管 - BJT POWER MOSFET RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| STE50DE100_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Hybrid emitter switched bipolar transistor ESBT 1000V - 50A - 0.026 ohm |
| STE50N40 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 400V V(BR)DSS | 50A I(D) |
| STE515AC | 制造商:CALIBER 制造商全稱:Caliber Electronics Inc. 功能描述:6 Pad Clipped Sinewave TCXO Oscillator |
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