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參數(shù)資料
| 型號： | STB75NH02L |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 24V - 0.0062W -75A - D2PAK STripFET⑩ III POWER MOSFET |
| 中文描述： | N溝道24V的- 0.0062W - 75A條-采用D2PAK STripFET⑩三功率MOSFET |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 319K |
| 代理商： | STB75NH02L |
7/8
STB75NH02L
HighSideSwitch(SW1)
LowSideSwitch(SW2)
conduction
P
δ
*
I
R
2
L
DS(on)SW1
)
1
L
I
R
2
DS(on)SW2
δ
switching
P
g
L
I
I
*
f
)
Q
(Q
*
V
gd(SW1)
gsth(SW1)
in
+
ZeroVoltageSwitching
Recovery
NotApplicable
1
f
Q
*
V
rr(SW2)
in
diode
P
Conduction
NotApplicable
f
t
L
I
V
deadtime
f(SW2)
)
gate(Q
G
P
f
gg
V
*
Q
g(SW1)
f
V
*
Q
gg
gls(SW2)
Qoss
P
2
f
Q
*
V
oss(SW1)
in
2
f
Q
*
V
oss(SW2)
in
1
DissipatedbySW1duringturn-on
Appendix A: Buck Converter Power Losses Estimation
DESCRIPTION
The power losses associated with the FETs in a
Synchronous Buck converter can be estimated us-
ing the equations shown in the table below. The for-
mulas give a good approximation, for the sake of
performance comparison, of how different pairs of
devices affect the converter efficiency. However a
very important parameter, the working temperature,
is not considered. The real device behavior is really
dependent on how the heat generated inside the de-
vices is removed to allow for a safer working junc-
tion temperature.
The low side (SW2) device requires:
- Very low RDS(on) to reduce conduction losses
- Small Q
gls
to reduce the gate charge losses
- Small C
oss
to reduce losses due to output
capaci tance
- Small Q
rr
to reduce losses on SW1 during its
turn-on
- The C
gd
/C
gs
ratio lower than V
th
/V
ratio
especially with low drain to source voltage
to avoid the cross conduction phenomenon
The high side (SW1) device requires:
- Small R
g
and L
s
to allow higher gate current
peak and to limit the voltage feedback on the gate
- Small Q
g
to have a faster commutation and
to reduce gate charge losses
- Low R
DS(on)
to reduce the conduction losses
Parameter
δ
Q
gsth
Q
gls
Pconduction
Pswitching
Pdiode
Pdiode
P
Qoss
Meaning
Duty-Cycle
Post Threshold Gate Charge
Third Quadrant Gate Charge
On State Losses
On-off Transition Losses
Conduction and Reverse Recovery Diode Losses
Gate Drive Losses
Output Capacitance Losses
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| STB75NH02L_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-Channel 24V - 0.0062ohm - 60A - D2PAK STripFET TM III Power MOSFET |
| STB75NH02LT4 | 功能描述:MOSFET N-Ch 24 Volt 75 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB76NF75 | 功能描述:MOSFET POWER MOSFET N-CH 75V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB76NF80 | 功能描述:MOSFET N-Ch 80 V .0095 ohm 80 A STripFET II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB7710 | 制造商:STMicroelectronics 功能描述: |
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