參數(shù)資料
型號： STB75NH02L
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 24V - 0.0062W -75A - D2PAK STripFET⑩ III POWER MOSFET
中文描述： N溝道24V的- 0.0062W - 75A條-采用D2PAK STripFET⑩三功率MOSFET
文件頁數(shù)： 2/8頁
文件大?。?/td> 319K
代理商： STB75NH02L
STB75NH02L
2/8
ABSOLUTE MAXIMUM RATINGS
Symbol
V
spike
(1)
Drain-source Voltage Rating
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(5)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS
(2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
THERMAL DATA
Rthj-case
Rthj-amb
T
l
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= 20V, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250μA
Parameter
Value
Unit
30
V
24
V
24
V
± 20
V
75
A
53
A
300
A
85
W
1
W/°C
TBD
mJ
-55 to 175
°C
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1
°C/W
°C/W
62.5
Maximum Lead Temperature for Soldering Purpose
300
°C
Test Conditions
I
D
= 25 mA, V
GS
= 0
Min.
24
Typ.
Max.
Unit
V
V
DS
= 20V
1
μA
10
μA
V
GS
= ± 20V
±100
nA
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 30 A
V
GS
= 5 V, I
D
= 30 A
0.0062
0.008
0.008
0.014
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB75NH02L_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-Channel 24V - 0.0062ohm - 60A - D2PAK STripFET TM III Power MOSFET
STB75NH02LT4 功能描述:MOSFET N-Ch 24 Volt 75 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB76NF75 功能描述:MOSFET POWER MOSFET N-CH 75V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB76NF80 功能描述:MOSFET N-Ch 80 V .0095 ohm 80 A STripFET II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB7710 制造商:STMicroelectronics 功能描述:
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