參數(shù)資料
型號： STB75NH02L
廠商： 意法半導體
英文描述： N-CHANNEL 24V - 0.0062W -75A - D2PAK STripFET⑩ III POWER MOSFET
中文描述： N溝道24V的- 0.0062W - 75A條-采用D2PAK STripFET⑩三功率MOSFET
文件頁數(shù)： 3/8頁
文件大?。?/td> 319K
代理商： STB75NH02L
3/8
STB75NH02L
ELECTRICAL CHARACTERISTICS
(CONTINUED)
DYNAMIC
Symbol
Parameter
g
fs
(3)
Forward Transconductance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer
Capacitance
R
g
Gate Input Resistance
SWITCHING ON
Symbol
t
d(on)
t
r
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(1)
V
SD
(3)
t
rr
Q
rr
I
RRM
1. Garanted when external R
g
= 4.7
and t
f
< t
f
max
2. Starting T
j
= 25°C, I
D
= 25A, V
DD
= 15V
3. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
4. Q
oss
= C
oss
*
V
in
, C
oss
= C
gd
+C
ds
. See Appendix A
5. Pulse width limited by safe operating area
Test Conditions
V
DS
= 15 V
,
I
D
= 30 A
V
DS
= 15 V, f = 1 MHz, V
GS
= 0
Min.
Typ.
TBD
Max.
Unit
S
2000
pF
420
pF
210
pF
f= 1 MHz Gate DC Bias= 0
Test Signal Level= 20 mV
Open Drain
1
Parameter
Test Conditions
V
DD
= 10 V, I
D
= 37.5 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
V
DD
= 10 V, I
D
=75 A,
V
GS
= 10 V
Min.
Typ.
TBD
TBD
Max.
Unit
ns
ns
Turn-on Delay Time
Rise Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
35
TBD
TBD
47
nC
nC
nC
Q
oss
(4)
Output Charge
V
DS
= 16 V, V
GS
= 0
TBD
nC
Parameter
Test Conditions
V
DD
= 10 V, I
D
= 37.5 A,
R
G
= 4.7
,
V
GS
= 10 V
(see test circuit, Figure 3)
Min.
Typ.
TBD
TBD
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
75
A
Source-drain Current (pulsed)
300
A
Forward On Voltage
I
SD
= 37.5 A, V
GS
= 0
1.3
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 75 A, di/dt = 100A/μs,
V
DD
= 15V, T
j
= 150°C
(see test circuit, Figure 5)
TBD
TBD
TBD
ns
nC
A
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相關代理商/技術參數(shù)
參數(shù)描述
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