參數(shù)資料
型號(hào)： ST7PLU05MAE
廠商： STMICROELECTRONICS
元件分類： 微控制器/微處理器
英文描述： 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PDSO8
封裝： 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
文件頁(yè)數(shù)： 3/124頁(yè)
文件大?。?/td> 1995K
代理商： ST7PLU05MAE
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Electrical characteristics
ST7LUS5, ST7LU05, ST7LU09
12.7
EMC (electromagnetic compatibilty) characteristics
Susceptibility tests are performed on a sample basis during product characterization.
12.7.1
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling two LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
●
ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
●
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100pF capacitor, until a functional disturbance occurs. This test
conforms with the IEC 1000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
IDD
Supply current(6)
Read / Write / Erase
modes
fCPU = 8 MHz, VDD = 5.5V
2.6
mA
No Read/No Write mode
100
A
Power down mode / HALT
0
0.1
1.
TA = -40°C to 85°C, unless otherwise specified.
2.
Up to 32 bytes can be programmed at a time.
3.
Data based on reliability test results and monitored in production.
4.
The data retention time increases when the TA decreases.
5.
Design target value pending full product characterization.
6.
Guaranteed by Design. Not tested in production.
Table 74.
EEPROM memory (ST7FLU09 only)
Symbol
Parameter
Conditions(1)
1.
TA = -40°C to 125°C, unless otherwise specified.
Min
Typ
Max
Unit
VDD
Operating voltage for EEPROM
write/erase
Refer to operating range of
VDD with TA, Section 12.3
3.0
5.5
V
tprog
Programming time for 1~32
bytes
510
ms
tRET
(2)
2.
Data based on reliability test results and monitored in production.
Data retention(3)
3.
The data retention time increases when the TA decreases.
TA = +55°C
20
years
NRW
Write/erase cycles
TA = +25°C
300k
cycles
Table 73.
Flash program memory (continued)
Symbol
Parameter
Conditions(1)
Min
Typ
Max
Unit
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