參數(shù)資料
型號： ST7FLITE09Y0B3
廠商： STMICROELECTRONICS
元件分類： 微控制器/微處理器
英文描述： 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PDIP16
封裝： 0.300 INCH, PLASTIC, DIP-16
文件頁數(shù)： 106/115頁
文件大?。?/td> 781K
代理商： ST7FLITE09Y0B3
ST7FLITE0
90/115
EMC CHARACTERISTICS (Cont’d)
13.7.2 Absolute Electrical Sensitivity
Based on three different tests (ESD, LU and DLU)
using specific measurement methods, the product
is stressed in order to determine its performance in
terms of electrical sensitivity. For more details, re-
fer to the AN1181 ST7 application note.
13.7.2.1 Electro-Static Discharge (ESD)
Electro-Static Discharges (3 positive then 3 nega-
tive pulses separated by 1 second) are applied to
the pins of each sample according to each pin
combination. The sample size depends of the
number of supply pins of the device (3 parts*(n+1)
supply pin). Two models are usually simulated:
Human Body Model and Machine Model. This test
conforms to the JESD22-A114A/A115A standard.
See Figure 60 and the following test sequences.
Human Body Model Test Sequence
–CL is loaded through S1 by the HV pulse gener-
ator.
– S1 switches position from generator to R.
– A discharge from CL through R (body resistance)
to the ST7 occurs.
– S2 must be closed 10 to 100ms after the pulse
delivery period to ensure the ST7 is not left in
charge state. S2 must be opened at least 10ms
prior to the delivery of the next pulse.
Machine Model Test Sequence
–CL is loaded through S1 by the HV pulse gener-
ator.
– S1 switches position from generator to ST7.
– A discharge from CL to the ST7 occurs.
– S2 must be closed 10 to 100ms after the pulse
delivery period to ensure the ST7 is not left in
charge state. S2 must be opened at least 10ms
prior to the delivery of the next pulse.
– R (machine resistance), in series with S2, en-
sures a slow discharge of the ST7.
Absolute Maximum Ratings
Figure 60. Typical Equivalent ESD Circuits
Notes:
1. Data based on characterization results, not tested in production.
Symbol
Ratings
Conditions
Maximum value 1) Unit
VESD(HBM)
Electro-static discharge voltage
(Human Body Model)
TA=+25°C
4000
V
VESD(MM)
Electro-static discharge voltage
(Machine Model)
TA=+25°C
TBD
ST7
S2
R=1500
S1
HIGH VOLTAGE
CL=100pF
PULSE
GENERATOR
ST7
S2
HIGH VOLTAGE
CL=200pF
PULSE
GENERAT OR
R=10k~10M
S1
HUMAN BODY MODEL
MACHINE MODEL
1
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相關代理商/技術(shù)參數(shù)
參數(shù)描述
ST7FLITE09Y0B6 功能描述:8位微控制器 -MCU Flash 1.5K SPI Intrf RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
ST7FLITE09Y0B6 制造商:STMicroelectronics 功能描述:IC 8BIT FLASH MCU 7FLITE09 DIP16
ST7FLITE09Y0B6TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8-bit microcontroller with single voltage Flash memory, data EEPROM, ADC, timers, SPI
ST7FLITE09Y0M3 功能描述:8位微控制器 -MCU Flash 1.5K SPI Intrf RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
ST7FLITE09Y0M6 功能描述:8位微控制器 -MCU Flash 1.5K SPI Intrf RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
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