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參數(shù)資料
| 型號： | SSM3J111TU |
| 廠商： | Toshiba Corporation |
| 英文描述： | Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications |
| 中文描述： | 場效應晶體管硅P溝道MOS型高速開關應用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 481K |
| 代理商： | SSM3J111TU |
SSM3J111TU
2007-11-01
1
1: Gate
2: Source
3: Drain
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J111TU
High Speed Switching Applications
2.5V drive
Low on-resistance:
Absolute Maximum Ratings
(Ta = 25°C)
R
on
= 480m
(max) (@V
GS
=
4 V)
R
on
= 680m
(max) (@V
GS
=
2.5 V)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
V
DS
V
GSS
I
D
I
DP
P
D (Note 1)
P
D (Note 2)
T
ch
T
stg
20
V
Gate-Source voltage
±
12
1
2
V
DC
Drain current
Pulse
A
800
Drain power dissipation
500
mW
Channel temperature
150
°
C
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on ceramic board.
(25.4 mm
×
25.4 mm
×
0.8 mm, Cu Pad: 645 mm
2
)
Note 2: Mounted on FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta = 25°C)
55~150
°
C
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
Drain-Source breakdown voltage
V
(BR) DSS
I
D
=
1 mA, V
GS
=
0
20
V
Drain cut-off current
I
DSS
V
DS
=
20 V, V
GS
=
0
1
μ
A
Gate leakage current
I
GSS
V
GS
=
±
12V, V
DS
=
0
±
1
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
0.1 mA
0.6
1.1
V
Forward transfer admittance
Y
fs
V
DS
=
3 V, I
D
=
0.3 A
(Note3)
0.6
1.2
S
I
D
=
0.3 A, V
GS
=
4.0 V
(Note3)
380
480
Drain-Source on-resistance
R
DS (ON)
I
D
=
0.3 A, V
GS
=
2.5 V
(Note3)
530
680
m
Ω
Input capacitance
C
iss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
160
pF
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
90
pF
Reverse transfer capacitance
C
rss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
25
pF
Turn-on time
t
on
27
Switching time
Turn-off time
t
off
V
DD
=
10 V, I
D
=
0.3 A,
V
GS
=
0~
2.5 V, R
G
=
4.7
Ω
43
ns
Drain-Source forward voltage
V
DSF
I
D
=
1A, V
GS
=
0 V (Note3)
0.85
1.2
V
Note3: Pulse test
Unit: mm
2.1±0.1
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
UFM
-
0
1.7±0.1
0
1
2
2
3
0
+
0
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| SSM3J111TU(TE85L) | 功能描述:MOSFET Vds=-20V Id=-1A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM3J112TU | 功能描述:MOSFET INCORRECT MOUSER P/N 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM3J112TU(TE85L) | 功能描述:MOSFET Vds=-30V Id=-1.1A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM3J113TU | 功能描述:MOSFET INCORRECT MOUSER P/N 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM3J113TU(TE85L) | 功能描述:MOSFET Vds=-20V Id=-1.7A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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