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參數(shù)資料
| 型號(hào)： | SSM3J112TU |
| 廠商： | Toshiba Corporation |
| 英文描述： | Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications |
| 中文描述： | 場(chǎng)效應(yīng)晶體管硅P溝道MOS型高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 137K |
| 代理商： | SSM3J112TU |
SSM3J112TU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J112TU
High Speed Switching Applications
4V drive
Low on-resistance:
R
on
= 790m
(max) (@V
GS
=
4 V)
R
on
= 390m
(max) (@V
GS
=
10 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
V
DS
V
GSS
I
D
I
DP
P
D (Note 1)
P
D (Note 2)
T
ch
T
stg
30
V
Gate-Source voltage
±
20
1.1
2.2
V
DC
Drain current
Pulse
A
800
Drain power dissipation
500
mW
Channel temperature
150
°
C
°
C
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on ceramic board.
(25.4 mm
×
25.4 mm
×
0.8 mm, Cu Pad: 645 mm
2
)
Note 2: Mounted on FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta = 25°C)
55~150
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
V
(BR) DSS
I
D
=
1 mA, V
GS
=
0
30
Drain-Source breakdown voltage
V
(BR) DSX
I
D
=
1 mA, V
GS
=
+
20 V
15
V
Drain cut-off current
I
DSS
V
DS
=
30 V, V
GS
=
0
1
μ
A
Gate leakage current
I
GSS
V
GS
=
±
16V, V
DS
=
0
±
1
μ
A
Gate threshold voltage
V
th
V
DS
=
5 V, I
D
=
0.1 mA
0.8
1.8
V
Forward transfer admittance
Y
fs
V
DS
=
5 V, I
D
=
0.5 A
(Note3)
0.5
1.0
S
I
D
=
0.5 A, V
GS
=
10 V
(Note3)
310
390
Drain-Source on-resistance
R
DS (ON)
I
D
=
0.5 A, V
GS
=
4 V
(Note3)
610
790
m
Ω
Input capacitance
C
iss
V
DS
=
15 V, V
GS
=
0, f
=
1 MHz
86
pF
Output capacitance
C
oss
V
DS
=
15 V, V
GS
=
0, f
=
1 MHz
25
pF
Reverse transfer capacitance
C
rss
V
DS
=
15 V, V
GS
=
0, f
=
1 MHz
14
pF
Turn-on time
t
on
14
Switching time
Turn-off time
t
off
V
DD
=
15 V, I
D
=
0.5 A,
V
GS
=
0~
4 V, R
G
=
10
Ω
8.5
ns
Drain-Source forward voltage
V
DSF
I
D
=
1.1A, V
GS
=
0 V (Note3)
0.85
1.2
V
Note3: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
1: Gate
2: Source
3: Drain
-
0
1.7±0.1
2.1±0.1
0
1
2
2
3
0
+
0
UFM
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參數(shù)描述 |
|---|---|
| SSM3J112TU(TE85L) | 功能描述:MOSFET Vds=-30V Id=-1.1A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM3J113TU | 功能描述:MOSFET INCORRECT MOUSER P/N 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM3J113TU(TE85L) | 功能描述:MOSFET Vds=-20V Id=-1.7A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM3J114TU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications Power Management Switch Applications |
| SSM3J114TU(T5L,T) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 20V 1.8A UFM |
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