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參數(shù)資料
| 型號： | SSM3J113TU |
| 廠商： | Toshiba Corporation |
| 英文描述： | Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications |
| 中文描述： | 場效應(yīng)晶體管硅P溝道MOS型高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 134K |
| 代理商： | SSM3J113TU |
SSM3J113TU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J113TU
High Speed Switching Applications
2.0V drive
Low on-resistance:
R
on
= 449m
(max) (@V
GS
=
2.0 V)
R
on
= 249m
(max) (@V
GS
=
2.5 V)
R
on
= 169m
(max) (@V
GS
=
4.0 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
V
DS
V
GSS
I
D
I
DP
P
D (Note 1)
P
D (Note 2)
T
ch
T
stg
20
±
12
1.7
3.4
800
500
150
55~150
V
V
DC
Pulse
Drain current
A
Drain power dissipation
mW
Channel temperature
Storage temperature range
°
C
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on ceramic board.
(25.4 mm
×
25.4 mm
×
0.8 mm, Cu Pad: 645 mm2 )
Note 2: Mounted on FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm2 )
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
V
(BR) DSS
I
D
=
1 mA, V
GS
=
0
20
Drain-Source breakdown voltage
V
(BR) DSX
I
D
=
1 mA, V
GS
=
+
12V
8
V
Drain cut-off current
I
DSS
V
DS
=
20 V, V
GS
=
0
1
μ
A
Gate leakage current
I
GSS
V
GS
=
±
12V, V
DS
=
0
±
1
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
0.1 mA
0.5
1.1
V
Forward transfer admittance
Y
fs
V
DS
=
3 V, I
D
=
0.65 A
(Note3)
1.3
2.7
S
I
D
=
0.65 A, V
GS
=
4.0 V
(Note3)
129
169
I
D
=
0.65 A, V
GS
=
2.5 V
I
D
=
0.65 A, V
GS
=
2.0 V
(Note3)
189
249
Drain-Source on-resistance
R
DS (ON)
(Note3)
249
449
m
Ω
Input capacitance
C
iss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
370
pF
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
116
pF
Reverse transfer capacitance
C
rss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
73
pF
Turn-on time
t
on
33
Switching time
Turn-off time
t
off
V
DD
=
10 V, I
D
=
0.65 A,
V
GS
=
0~
2.5 V, R
G
=
4.7
Ω
47
ns
Drain-Source forward voltage
V
DSF
I
D
=
1.7 A, V
GS
=
0 V (Note3)
0.77
1.2
V
Note3: Pulse test
Unit: mm
2.1±0.1
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
1: Gate
2: Source
3: Drain
-
0
1.7±0.1
0
1
2
2
3
0
+
0
UFM
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