參數(shù)資料
型號(hào)： SSM3J108TU
廠商： Toshiba Corporation
英文描述： Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
中文描述： 場(chǎng)效應(yīng)晶體管硅P溝道MOS型高速開(kāi)關(guān)應(yīng)用
文件頁(yè)數(shù)： 1/5頁(yè)
文件大小： 149K
代理商： SSM3J108TU
SSM3J108TU
2007-11-01
1
1: Gate
2: Source
3: Drain
UFM
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J108TU
High Speed Switching Applications
1.8V drive
Low on-resistance:
R
on
= 363m
(max) (@V
GS
=
1.8 V)
R
on
= 230m
(max) (@V
GS
=
2.5 V)
R
on
= 158m
(max) (@V
GS
=
4.0 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
V
DS
V
GSS
I
D
I
DP
P
D (Note 1)
P
D (Note 2)
T
ch
T
stg
20
±
8
1.8
3.6
800
500
150
55~150
V
V
DC
Pulse
Drain current
A
Drain power dissipation
mW
Channel temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on ceramic board.
(25.4 mm
×
25.4 mm
×
0.8 mm, Cu Pad: 645 mm
2
)
Note 2: Mounted on FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta = 25°C)
°
C
°
C
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
V
(BR) DSS
V
(BR) DSX
I
DSS
I
D
=
1 mA, V
GS
=
0
I
D
=
1 mA, V
GS
=
+
8 V
V
DS
=
20 V, V
GS
=
0
20
Drain-Source breakdown voltage
12
V
Drain cut-off current
10
μ
A
Gate leakage current
I
GSS
V
GS
=
±
8V, V
DS
=
0
±
1
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
1 mA
0.3
1.0
V
Forward transfer admittance
Y
fs
V
DS
=
3 V, I
D
=
0.8 A
(Note3)
1.9
3.2
S
I
D
=
0.8 A, V
GS
=
4.0 V
I
D
=
0.4 A, V
GS
=
2.5 V
I
D
=
0.1 A, V
GS
=
1.8 V
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
(Note3)
125
158
(Note3)
(Note3)
170
230
230
363
Drain-Source on-resistance
R
DS (ON)
m
Ω
Input capacitance
C
iss
250
pF
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
45
pF
Reverse transfer capacitance
C
rss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
35
pF
Turn-on time
t
on
12
Switching time
Turn-off time
t
off
V
DD
=
10 V, I
D
=
0.25 A,
V
GS
=
0~
2.5 V, R
G
=
4.7
Ω
18
ns
Drain-Source forward voltage
V
DSF
I
D
=
1.8A, V
GS
=
0 V (Note3)
0.85
1.2
V
Note3: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
-
0
1.7±0.1
2.1±0.1
0
1
2
2
3
0
+
0
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參數(shù)描述
SSM3J108TU(TE85L) 功能描述:MOSFET Vds=-20V Id=-1.8A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3J109TU 功能描述:MOSFET INCORRECT MOUSER P/N 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3J109TU(TE85L) 功能描述:MOSFET Vds=-20V Id=-2A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3J110TU 功能描述:MOSFET INCORRECT MOUSER P/N 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3J110TU(TE85L) 功能描述:MOSFET Vds=-12V Id=-2.3A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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