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參數(shù)資料
| 型號(hào)： | SPP04N60S5 |
| 廠商： | SIEMENS A G |
| 元件分類： | 功率晶體管 |
| 英文描述： | Cool MOS Power Transistor(MOS 型功率晶體管) |
| 中文描述： | 4.5 A, 600 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 136K |
| 代理商： | SPP04N60S5 |
Semiconductor Group
01 / 1999
5
SPP04N60S5
SPB04N60S5
Preliminary data
Drain current
I
D
= f (T
C
)
parameter: V
GS
≥
10 V
SPP04N60S5
0
20
40
60
80
100
120
°C
160
T
j
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
A
5.0
I
D
Power Dissipation
P
tot
= f (T
C
)
0
20
40
60
80
100
120
°C
160
150
0
5
10
15
20
25
30
35
40
45
W
55
SPP04N60S5
P
t
Transient thermal impedance
Z
thJC
= f(t
P
)
Parameter: D=t
P
/T
10
-5
10
-4
10
-3
10
-2
10
-1
s
t
p
-2
10
-1
10
0
10
1
10
K/W
Z
t
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
single pulse
Safe operating area
I
D
=f (T
C
)
parameter: D=0.01, T
C
=25°C
SPP04N60S5
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
A
I
D
R
DSo)
V
DS
I
D
DC
10 ms
1 ms
100 μs
10 μs
t
p = 7.1μs
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