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參數(shù)資料
| 型號： | SPP04N60S5 |
| 廠商： | SIEMENS A G |
| 元件分類： | 功率晶體管 |
| 英文描述： | Cool MOS Power Transistor(MOS 型功率晶體管) |
| 中文描述： | 4.5 A, 600 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 136K |
| 代理商： | SPP04N60S5 |
Semiconductor Group
01 / 1999
4
SPP04N60S5
SPB04N60S5
Preliminary data
Electrical Characteristics
Parameter
Symbol
Values
typ.
Unit
at T
= 25 °C, unless otherwise specified
Gate Charge Characteristics
Gate-source charge
I
D
= 4.5 A,
V
DD
= 350 V
Gate-drain charge
I
D
= 4.5 A,
V
DD
= 350 V
Total gate charge
V
DD
= 350 V,
I
D
= 4.5 A,
V
GS
= 0 to 10 V
min.
max.
Q
gs
-
4.1
-
nC
Q
gd
-
9.2
-
Q
g
-
17
-
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 °C
Inverse diode direct current,pulsed
T
C
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 4.5 A
Reverse recovery time
V
R
= 350 V,
I
F
=
I
S
,
di
F
/dt
= 100 A/μs
Reverse recovery charge
V
R
= 350 V,
I
F=
l
S
,
di
F
/dt
= 100 A/μs
I
S
-
-
4.5
A
I
SM
-
-
7.7
V
SD
-
1
1.2
V
t
rr
-
900
-
ns
Q
rr
-
3.2
-
μC
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SPP04N60S5_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated |
| SPP04N60S5_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS? Power Transistor Feature New revolutionary high voltage technology |
| SPP04N60S5BKSA1 | 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 600V 4.5A TO-220 |
| SPP04N60S5HKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220AB |
| SPP04N60S5IN | 制造商:Infineon Technologies AG 功能描述: |
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