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參數(shù)資料
| 型號(hào)： | SPP04N60S5 |
| 廠商： | SIEMENS A G |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Cool MOS Power Transistor(MOS 型功率晶體管) |
| 中文描述： | 4.5 A, 600 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 136K |
| 代理商： | SPP04N60S5 |
Semiconductor Group
01 / 1999
1
SPP04N60S5
SPB04N60S5
Cool MOS
Power Transistor
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche proved
Extreme dvdt rated
Optimized capacitances
Improved noise immunity
Former development designation:
SPPx6N60S5/SPBx6N60S5
G,1
D,2
S,3
C
O L
MOS
SPP04N60S5
SPB04N60S5
V
DS
600 V 4.5 A
I
D
R
DS(on)
0.95
Package
P-TO220-3-1
P-TO263-3-2
Marking
04N60S5
04N60S5
Ordering Code
Q67040-S4200
Q67040-S4201
Maximum Ratings ,
at T
j
= 25 ° C, unless otherwise specified
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current, tp = 1ms
1)
T
C
= 25 °C
Avalanche energy, single pulse
I
D
= 4.5 A,
V
DD
= 50 V,
R
GS
= 25
Periodic avalanche energy
E
AR
only limited by
T
jmax
Reverse diode dvdt
I
S
= 4.5 A,
V
DS
<
V
DSS
,
didt
= 100 A/μs,
T
jmax
= 150 °C
Gate source voltage
Power dissipation
T
C
= 25 °C
Operating and storage temperature
Symbol
Value
4.5
2.8
Unit
A
I
D
I
D puls
7.7
E
AS
130
mJ
dvdt
6
kV/μs
V
GS
P
tot
±
20
50
V
W
T
j
,
T
stg
-55 ...+150
°C
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| SPP04N60S5_07 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated |
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| SPP04N60S5BKSA1 | 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 600V 4.5A TO-220 |
| SPP04N60S5HKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220AB |
| SPP04N60S5IN | 制造商:Infineon Technologies AG 功能描述: |
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