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參數(shù)資料
| 型號： | SPP04N60S5 |
| 廠商： | SIEMENS A G |
| 元件分類： | 功率晶體管 |
| 英文描述： | Cool MOS Power Transistor(MOS 型功率晶體管) |
| 中文描述： | 4.5 A, 600 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 136K |
| 代理商： | SPP04N60S5 |
Semiconductor Group
01 / 1999
1
SPP04N60S5
SPB04N60S5
Preliminary data
Cool MOS
Power Transistor
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche proved
Extreme dvdt rated
Optimized capacitances
Improved noise immunity
Former development designation:
SPPx6N60S5/SPBx6N60S5
G,1
D,2
S,3
C
O L
MOS
Type
SPP04N60S5
SPB04N60S5
V
DS
600 V 4.5 A
I
D
R
DS(on)
0.95
Package
P-TO220-3-1
P-TO263-3-2
Marking
04N60S5
04N60S5
Ordering Code
Q67040-S4200
Q67040-S4201
Maximum Ratings ,
at T
j
= 25 ° C, unless otherwise specified
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current, tp = 1ms
1)
T
C
= 25 °C
Avalanche energy, single pulse
I
D
= 4.5 A,
V
DD
= 50 V,
R
GS
= 25
Periodic avalanche energy
E
AR
only limited by
T
jmax
Reverse diode dvdt
I
S
= 4.5 A,
V
DS
<
V
DSS
,
didt
= 100 A/μs,
T
jmax
= 150 °C
Gate source voltage
Power dissipation
T
C
= 25 °C
Operating and storage temperature
Symbol
Value
4.5
2.8
Unit
A
I
D
I
D puls
7.7
E
AS
130
mJ
dvdt
6
kV/μs
V
GS
P
tot
±
20
50
V
W
T
j
,
T
stg
-55 ...+150
°C
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| SPP04N60S5IN | 制造商:Infineon Technologies AG 功能描述: |
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