參數(shù)資料
型號: SKM50GB063D
廠商: SEMIKRON INTERNATIONAL
元件分類: 功率晶體管
英文描述: SEMITRANS M Superfast NPT-IGBT Modules
中文描述: 70 A, 600 V, N-CHANNEL IGBT
封裝: CASE D 61, SEMITRANS 2, 7 PIN
文件頁數(shù): 5/6頁
文件大小: 215K
代理商: SKM50GB063D
by SEMIKRON
B 6 – 11
0898
M50GB06.X LS-24
0
1
2
3
4
5
6
0
1000
2000
3000
4000
5000
di
F
/dt
A/μs
Q
rr
μC
I
F
=
75 A
50 A
38 A
25 A
13 A
40
25
80
15
R
G
=
10
M50GB06.XLS-23
0
20
40
60
80
0
1000
2000
3000
4000
di
F
/dt
A/μs
I
RR
A
40
25
80
15
R
G
=
10
M50GB06.XLS-22
0
20
40
60
80
0
20
40
60
80
100
I
F
A
I
RR
A
40
80
25
15
R
G=
10
M50GB06.X LS-20
0,001
0,01
0,1
1
0,00001
0,0001
0,001
0,01
0,1
1
s
Z
thJC
K/W
D=0,5
0,2
0,1
0,05
0,02
0,01
single pulse
t
p
M50GB06.X LS-19
0,001
0,01
0,1
1
0,00001
0,0001
0,001
0,01
0,1
1
t
p
s
Z
thJC
K/W
D=0,50
0,20
0,10
0,05
0,02
0,01
single pulse
Fig. 19 Transient thermal impedance of IGBT
Z
thJC
= f (t
p
); D = t
p
/ t
c
= t
p
· f
Fig. 20 Transient thermal impedance of
inverse CAL diodes Z
thJC
= f (t
p
); D = t
p
/ t
c
= t
p
· f
Fig. 22 Typ. CAL diode peak reverse recovery
current I
RR
= f (I
F
; R
G
)
Fig. 23 Typ. CAL diode peak reverse recovery
current I
RR
= f (di/dt)
Fig. 24 Typ. CAL diode recovered charge
V
CC
= 300 V
T
j
= 125 °C
V
GE
= ± 15 V
I
F
= 50 A
V
CC
= 300 V
T
j
= 125 °C
V
GE
= ± 15 V
V
CC
= 300 V
T
j
= 125 °C
V
GE
= ± 15 V
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