參數(shù)資料
型號: SKM50GB063D
廠商: SEMIKRON INTERNATIONAL
元件分類: 功率晶體管
英文描述: SEMITRANS M Superfast NPT-IGBT Modules
中文描述: 70 A, 600 V, N-CHANNEL IGBT
封裝: CASE D 61, SEMITRANS 2, 7 PIN
文件頁數(shù): 4/6頁
文件大?。?/td> 215K
代理商: SKM50GB063D
B 6
10
0898
by SEMIKRON
SKM 50 GB 063 D
M50GB06.XLS-18
0
0,2
0,4
0,6
0,8
0
20
40
60
80
100
I
F
A
E
offD
mJ
40
25
80
15
R
G
=
10
M50GB06.XLS-17
0
20
40
60
80
0
0,4
0,8
1,2
1,6
2
V
F
V
I
F
A
T
j
=125°C typ.
T
j
=25°C typ.
T
j
=125°C max.
T
j
=25°C max.
M50GB06.XLS-16
10
100
1000
0
20
40
60
80
100
120
R
G
t
ns
t
doff
t
don
t
r
t
f
M50GB06.XLS-15
10
100
1000
0
20
40
60
80
100
120
I
C
A
t
ns
t
doff
t
don
t
r
t
f
M50GB06.XLS-14
0,01
0,1
1
10
0
10
20
30
40
V
CE
V
C
nF
C
ies
C
oes
C
res
M50GB06.XLS-13
0
2
4
6
8
10
12
14
16
18
20
0
40
80
120
160
Q
Gate
nC
V
GE
V
100V
300V
Fig. 13 Typ. gate charge characteristic
Fig. 14 Typ. capacitances vs.V
CE
V
GE
= 0 V
f = 1 MHz
Fig. 15 Typ. switching times vs. I
C
Fig. 16 Typ. switching times vs. gate resistor R
G
Fig. 17 Typ. CAL diode forward characteristic
Fig. 18 Diode turn-off energy dissipation per pulse
T
j
= 125 °C
V
CE
= 300 V
V
GE
= ± 15 V
I
C
= 50 A
induct. load
I
Cpuls
= 50 A
T
j
= 125 °C
V
CE
= 300 V
V
GE
= ± 15 V
R
Gon
= 22
R
Goff
= 22
induct. load
V
CC
= 300 V
T
j
= 125 °C
V
GE
= ± 15 V
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