參數(shù)資料
型號(hào): SKM50GB063D
廠商: SEMIKRON INTERNATIONAL
元件分類: 功率晶體管
英文描述: SEMITRANS M Superfast NPT-IGBT Modules
中文描述: 70 A, 600 V, N-CHANNEL IGBT
封裝: CASE D 61, SEMITRANS 2, 7 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 215K
代理商: SKM50GB063D
by SEMIKRON
B 6 – 8
SKM 50 GB 063 D
0796
M50GB06.XLS-6
0
2
4
6
8
10
12
0
100
200
300
400
500
600
700
V
CE
V
I
CSC
/I
C
allowed numbers of
short circuits: <1000
time between short
circuits: >1s
di/dt= 300 A/μs
900 A/μs
1500 A/μs
M50GB06.XLS-5
0
0,5
1
1,5
2
2,5
0
100
200
300
400
500
600
700
V
CE
V
I
Cpuls
/I
C
M50GB06.XLS-4
0,1
1
10
100
1000
1
10
100
1000
10000
V
CE
V
I
C
A
t
p
=12μs
100μs
1ms
10ms
M50GB06.XLS-3
0
1
2
3
4
5
6
0
20
40
60
80
100
120
R
G
E
mWs
E
on
E
off
M50GB06.XLS-2
0
1
2
3
4
5
6
7
8
0
20
40
60
80
100
120
140
I
C
A
E
mWs
E
on
E
off
M50GB06.XLS-1
0
50
100
150
200
250
300
0
20
40
60
80
100
120
140
160
T
C
°C
P
tot
W
Fig. 3 Turn-on /-off energy = f (R
G
)
Fig. 4 Maximum safe operating area (SOA) I
C
= f (V
CE
)
Fig. 1 Rated power dissipation P
tot
= f (T
C
)
Fig. 2 Turn-on /-off energy = f (I
C
)
Fig. 5 Turn-off safe operating area (RBSOA)
Fig. 6 Safe operating area at short circuit I
C
= f (V
CE
)
T
j
= 125 °C
V
CE
= 300 V
V
GE
= ± 15 V
R
G
= 22
1 pulse
T
C
= 25 °C
T
j
150 °C
T
j
= 125 °C
V
CE
= 300 V
V
GE
= ± 15 V
I
C
= 50 A
T
j
150 °C
VGE = ± 15 V
tsc
10 μs
L < 35 nH
I
C
= 50 A
T
j
150 °C
V
GE
= ± 15 V
R
Goff
= 22
I
C
= 50 A
Not for
linear use
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